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ATM4N65TE Specs and Replacement

Type Designator: ATM4N65TE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO252

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ATM4N65TE datasheet

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ATM4N65TE

ATM4N65TE N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage 650V Continuous Drain Current 4A DESCRIPTION The ATM4N65TE is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching ... See More ⇒

Detailed specifications: ATM2302BNSA, ATM2306NSA, ATM2312NSA, ATM2601PSG, ATM2N65TE, ATM2N65TF, ATM3400ANSA, ATM3404NSA, NCEP15T14, ATM7002KNSA, ATM7002NSA, ATM7430NDH, ATM8N80TF, AO3481, AO3485, AO3487, AO4407C

Keywords - ATM4N65TE MOSFET specs

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