All MOSFET. ATM4N65TE Datasheet

 

ATM4N65TE Datasheet and Replacement


   Type Designator: ATM4N65TE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO252
 

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ATM4N65TE Datasheet (PDF)

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ATM4N65TE

ATM4N65TE N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage: 650V Continuous Drain Current: 4A DESCRIPTION The ATM4N65TE is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching

Datasheet: ATM2302BNSA , ATM2306NSA , ATM2312NSA , ATM2601PSG , ATM2N65TE , ATM2N65TF , ATM3400ANSA , ATM3404NSA , IRFP450 , ATM7002KNSA , ATM7002NSA , ATM7430NDH , ATM8N80TF , AO3481 , AO3485 , AO3487 , AO4407C .

History: PE532DY | OSG60R1K8PF

Keywords - ATM4N65TE MOSFET datasheet

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