All MOSFET. BLM2010E Datasheet

 

BLM2010E Datasheet and Replacement


   Type Designator: BLM2010E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: TSSOP8
 

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BLM2010E Datasheet (PDF)

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BLM2010E

ROHS Product BLM2010E N-Channel Enhancement Mode Power MOSFET Description The BLM2010E uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features V = 20V,I =7A DS DTyp.R

Datasheet: ATM7430NDH , ATM8N80TF , AO3481 , AO3485 , AO3487 , AO4407C , AONR21321 , AOTF4N60L , STP80NF70 , IRFS240B , IRFS244B , IRFS254B , IRFS340B , IRFS440B , IRFS620B , IRFS621 , IRFS624B .

History: AP10P500N | 2SK3376TK | AP95T06GP | IXFR80N15Q | SM9992DSQG | IXFP80N25X3 | AP10TN5R5MT

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