BLM2010E PDF and Equivalents Search

 

BLM2010E Specs and Replacement

Type Designator: BLM2010E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: TSSOP8

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BLM2010E datasheet

 ..1. Size:307K  belling
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BLM2010E

ROHS Product BLM2010E N-Channel Enhancement Mode Power MOSFET Description The BLM2010E uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features V = 20V,I =7A DS D Typ.R... See More ⇒

Detailed specifications: ATM7430NDH, ATM8N80TF, AO3481, AO3485, AO3487, AO4407C, AONR21321, AOTF4N60L, 10N65, IRFS240B, IRFS244B, IRFS254B, IRFS340B, IRFS440B, IRFS620B, IRFS621, IRFS624B

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