IRFS620B PDF and Equivalents Search

 

IRFS620B Specs and Replacement

Type Designator: IRFS620B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO220F

IRFS620B substitution

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IRFS620B datasheet

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IRFS620B

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IRFS620B

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IRFS620B

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IRFS620B

November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13.5 nC) planar, DMOS technology. Low Crss ( typical 9.5 pF) This advanced technology has been especially tailored to ... See More ⇒

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Detailed specifications: AONR21321, AOTF4N60L, BLM2010E, IRFS240B, IRFS244B, IRFS254B, IRFS340B, IRFS440B, 20N50, IRFS621, IRFS624B, IRF624B, IRFS631, IRFS641, IRF720B, IRFS720B, AF2301P

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