All MOSFET. IRFS620B Datasheet

 

IRFS620B Datasheet and Replacement


   Type Designator: IRFS620B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO220F
 

 IRFS620B substitution

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IRFS620B Datasheet (PDF)

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IRFS620B

November 2001IRF620B/IRFS620B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

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IRFS620B

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IRFS620B

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IRFS620B

November 2001IRF624B/IRFS624B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13.5 nC)planar, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to

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Datasheet: AONR21321 , AOTF4N60L , BLM2010E , IRFS240B , IRFS244B , IRFS254B , IRFS340B , IRFS440B , 20N50 , IRFS621 , IRFS624B , IRF624B , IRFS631 , IRFS641 , IRF720B , IRFS720B , AF2301P .

History: NTMFS5C468NLT1G

Keywords - IRFS620B MOSFET datasheet

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