All MOSFET. IRFS720B Datasheet

 

IRFS720B Datasheet and Replacement


   Type Designator: IRFS720B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.75 Ohm
   Package: TO220F
 

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IRFS720B Datasheet (PDF)

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IRFS720B

November 2001IRF720B/IRFS720B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

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IRFS720B

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IRFS720B

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IRFS720B

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 1.408 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

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Datasheet: IRFS440B , IRFS620B , IRFS621 , IRFS624B , IRF624B , IRFS631 , IRFS641 , IRF720B , MMIS60R580P , AF2301P , APM2071PD , AMS4004 , AMS4210 , B1M160120HC , CE3512K2 , C2M1000170J , C3M0065090D .

Keywords - IRFS720B MOSFET datasheet

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