All MOSFET. IRFS720B Datasheet

 

IRFS720B Datasheet and Replacement


   Type Designator: IRFS720B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.75 Ohm
   Package: TO220F
 

 IRFS720B substitution

   - MOSFET ⓘ Cross-Reference Search

 

IRFS720B Datasheet (PDF)

 ..1. Size:880K  1
 irf720b irfs720b.pdf pdf_icon

IRFS720B

November 2001IRF720B/IRFS720B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to

 7.1. Size:295K  1
 irfs720 irfs721 irfs722 irfs723.pdf pdf_icon

IRFS720B

 7.2. Size:284K  1
 irfs720 irfs721.pdf pdf_icon

IRFS720B

 7.3. Size:501K  samsung
 irfs720a.pdf pdf_icon

IRFS720B

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 1.408 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

SHOW MORE

Datasheet: IRFS440B , IRFS620B , IRFS621 , IRFS624B , IRF624B , IRFS631 , IRFS641 , IRF720B , AO3401 , AF2301P , APM2071PD , AMS4004 , AMS4210 , B1M160120HC , CE3512K2 , C2M1000170J , C3M0065090D .

History: FTK2N65P

Keywords - IRFS720B MOSFET datasheet

 IRFS720B cross reference
 IRFS720B equivalent finder
 IRFS720B lookup
 IRFS720B substitution
 IRFS720B replacement

 

 
Back to Top

 


 
.