IRFS720B PDF and Equivalents Search

 

IRFS720B Specs and Replacement

Type Designator: IRFS720B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.75 Ohm

Package: TO220F

IRFS720B substitution

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IRFS720B datasheet

 ..1. Size:880K  1
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IRFS720B

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 7.2. Size:284K  1
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IRFS720B

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 7.3. Size:501K  samsung
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IRFS720B

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 1.408 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic ... See More ⇒

Detailed specifications: IRFS440B, IRFS620B, IRFS621, IRFS624B, IRF624B, IRFS631, IRFS641, IRF720B, P60NF06, AF2301P, APM2071PD, AMS4004, AMS4210, B1M160120HC, CE3512K2, C2M1000170J, C3M0065090D

Keywords - IRFS720B MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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