All MOSFET. AF2301P Datasheet

 

AF2301P Datasheet and Replacement


   Type Designator: AF2301P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 127 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT23
 

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AF2301P Datasheet (PDF)

 ..1. Size:133K  anachip
 af2301p.pdf pdf_icon

AF2301P

AF2301P20V P-Channel Enhancement Mode MOSFET Features Product Summary - Advanced trench process technology VDS = - 20V - High density cell design for ultra low on-resistance RDS (on), VGS@-4.5V, IDS@-2.8A =130m. - Excellent thermal and electrical capabilities RDS (on), VGS@-2.5V, IDS@-2.0A =190m. - Compact and low profile SOT-23 package Pin Descriptions Pin Assignments

 0.1. Size:2936K  cn vbsemi
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AF2301P

AF2301PWLwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

Datasheet: IRFS620B , IRFS621 , IRFS624B , IRF624B , IRFS631 , IRFS641 , IRF720B , IRFS720B , IRF520 , APM2071PD , AMS4004 , AMS4210 , B1M160120HC , CE3512K2 , C2M1000170J , C3M0065090D , C3M0065100K .

History: 25N10G-TM3-T | APT4080BN

Keywords - AF2301P MOSFET datasheet

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