AF2301P PDF and Equivalents Search

 

AF2301P Specs and Replacement

Type Designator: AF2301P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 127 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: SOT23

AF2301P substitution

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AF2301P datasheet

 ..1. Size:133K  anachip
 af2301p.pdf pdf_icon

AF2301P

AF2301P 20V P-Channel Enhancement Mode MOSFET Features Product Summary - Advanced trench process technology VDS = - 20V - High density cell design for ultra low on-resistance RDS (on), VGS@-4.5V, IDS@-2.8A =130m . - Excellent thermal and electrical capabilities RDS (on), VGS@-2.5V, IDS@-2.0A =190m . - Compact and low profile SOT-23 package Pin Descriptions Pin Assignments... See More ⇒

 0.1. Size:2936K  cn vbsemi
 af2301pwl.pdf pdf_icon

AF2301P

AF2301PWL www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS ... See More ⇒

Detailed specifications: IRFS620B, IRFS621, IRFS624B, IRF624B, IRFS631, IRFS641, IRF720B, IRFS720B, 75N75, APM2071PD, AMS4004, AMS4210, B1M160120HC, CE3512K2, C2M1000170J, C3M0065090D, C3M0065100K

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