All MOSFET. AMS4210 Datasheet

 

AMS4210 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AMS4210
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 12.8 nS
   Cossⓘ - Output Capacitance: 107 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: SOP8

 AMS4210 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AMS4210 Datasheet (PDF)

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 ams4210.pdf

AMS4210 AMS4210

AMS4210 Dual N-CH Fast Switching MOSFETs GENERAL DESCRIPTION The AMS4210 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent R and gate charge for most of the synchronous DSONbuck converter applications. The AMS4210 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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