All MOSFET. AMS4210 Datasheet

 

AMS4210 Datasheet and Replacement


   Type Designator: AMS4210
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 10 nC
   tr ⓘ - Rise Time: 12.8 nS
   Cossⓘ - Output Capacitance: 107 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: SOP8
 

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AMS4210 Datasheet (PDF)

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AMS4210

AMS4210 Dual N-CH Fast Switching MOSFETs GENERAL DESCRIPTION The AMS4210 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent R and gate charge for most of the synchronous DSONbuck converter applications. The AMS4210 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.

Datasheet: IRF624B , IRFS631 , IRFS641 , IRF720B , IRFS720B , AF2301P , APM2071PD , AMS4004 , STP65NF06 , B1M160120HC , CE3512K2 , C2M1000170J , C3M0065090D , C3M0065100K , C3M0120090D , C3M0120090J , 2N7002ED .

History: HCFL65R210

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