All MOSFET. B1M160120HC Datasheet

 

B1M160120HC Datasheet and Replacement


   Type Designator: B1M160120HC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 118 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 73 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.189 Ohm
   Package: TO247
 

 B1M160120HC substitution

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B1M160120HC Datasheet (PDF)

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B1M160120HC

B1M160120HC SiC MOSFET V 1200 VDS I (Tc=25C) 20 A D R 160 m DS(on)Features: Low On-Resistance with High Blocking Voltage Low Capacitance Avalanche Ruggedness Halogen Free, Rohs Compliant 1 2 3 Benefits High Frequency Operation Enabling higher switching frequency Increased power density Reduction of Heat Sink Requirement

Datasheet: IRFS631 , IRFS641 , IRF720B , IRFS720B , AF2301P , APM2071PD , AMS4004 , AMS4210 , NCEP15T14 , CE3512K2 , C2M1000170J , C3M0065090D , C3M0065100K , C3M0120090D , C3M0120090J , 2N7002ED , 2N7002ET .

History: VP2106 | AP6P064JB | AUIRFR3504 | HSU4016 | FDFME3N311ZT | SFS130N06GF | WMN03N80M3

Keywords - B1M160120HC MOSFET datasheet

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