B1M160120HC Datasheet and Replacement
Type Designator: B1M160120HC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 118 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 73 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.189 Ohm
Package: TO247
B1M160120HC substitution
B1M160120HC Datasheet (PDF)
b1m160120hc.pdf
B1M160120HC SiC MOSFET V 1200 VDS I (Tc=25C) 20 A D R 160 m DS(on)Features: Low On-Resistance with High Blocking Voltage Low Capacitance Avalanche Ruggedness Halogen Free, Rohs Compliant 1 2 3 Benefits High Frequency Operation Enabling higher switching frequency Increased power density Reduction of Heat Sink Requirement
Datasheet: IRFS631 , IRFS641 , IRF720B , IRFS720B , AF2301P , APM2071PD , AMS4004 , AMS4210 , IRF1405 , CE3512K2 , C2M1000170J , C3M0065090D , C3M0065100K , C3M0120090D , C3M0120090J , 2N7002ED , 2N7002ET .
History: SVSP60R090FJDHD4 | FC551601 | IRFS624B | ZXM66P03N8 | CRTD110N03L | 2SK3111 | STF40NF06
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: SVSP60R090FJDHD4 | FC551601 | IRFS624B | ZXM66P03N8 | CRTD110N03L | 2SK3111 | STF40NF06
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