B1M160120HC PDF and Equivalents Search

 

B1M160120HC Specs and Replacement

Type Designator: B1M160120HC

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 118 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 73 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.189 Ohm

Package: TO247

B1M160120HC substitution

- MOSFET ⓘ Cross-Reference Search

 

B1M160120HC datasheet

 ..1. Size:856K  basicsemi
 b1m160120hc.pdf pdf_icon

B1M160120HC

B1M160120HC SiC MOSFET V 1200 V DS I (Tc=25 C) 20 A D R 160 m DS(on) Features Low On-Resistance with High Blocking Voltage Low Capacitance Avalanche Ruggedness Halogen Free, Rohs Compliant 1 2 3 Benefits High Frequency Operation Enabling higher switching frequency Increased power density Reduction of Heat Sink Requirement... See More ⇒

Detailed specifications: IRFS631, IRFS641, IRF720B, IRFS720B, AF2301P, APM2071PD, AMS4004, AMS4210, IRF1405, CE3512K2, C2M1000170J, C3M0065090D, C3M0065100K, C3M0120090D, C3M0120090J, 2N7002ED, 2N7002ET

Keywords - B1M160120HC MOSFET specs

 B1M160120HC cross reference

 B1M160120HC equivalent finder

 B1M160120HC pdf lookup

 B1M160120HC substitution

 B1M160120HC replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

↑ Back to Top
.