All MOSFET. B1M160120HC Datasheet

 

B1M160120HC Datasheet and Replacement


   Type Designator: B1M160120HC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 118 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 73 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.189 Ohm
   Package: TO247
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B1M160120HC Datasheet (PDF)

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B1M160120HC

B1M160120HC SiC MOSFET V 1200 VDS I (Tc=25C) 20 A D R 160 m DS(on)Features: Low On-Resistance with High Blocking Voltage Low Capacitance Avalanche Ruggedness Halogen Free, Rohs Compliant 1 2 3 Benefits High Frequency Operation Enabling higher switching frequency Increased power density Reduction of Heat Sink Requirement

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BLF6G38LS-100 | HLML6401 | NTLJS4149PTAG | HAT2118R | SI4425BDY | TDM3436 | AP85T03GH-HF

Keywords - B1M160120HC MOSFET datasheet

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