B1M160120HC MOSFET. Datasheet pdf. Equivalent
Type Designator: B1M160120HC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 118 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 73 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.189 Ohm
Package: TO247
B1M160120HC Transistor Equivalent Substitute - MOSFET Cross-Reference Search
B1M160120HC Datasheet (PDF)
..1. Size:856K basicsemi
b1m160120hc.pdf
b1m160120hc.pdf
B1M160120HC SiC MOSFET V 1200 VDS I (Tc=25C) 20 A D R 160 m DS(on)Features: Low On-Resistance with High Blocking Voltage Low Capacitance Avalanche Ruggedness Halogen Free, Rohs Compliant 1 2 3 Benefits High Frequency Operation Enabling higher switching frequency Increased power density Reduction of Heat Sink Requirement
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
