CE3512K2 Specs and Replacement
Type Designator: CE3512K2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 4 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 0.027 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 19 Ohm
Package: MICRO-X
CE3512K2 substitution
- MOSFET ⓘ Cross-Reference Search
CE3512K2 datasheet
ce3512k2.pdf
RF Low Noise FET CE3512K2 12 GHz Super Low Noise FET in Hollow Plastic PKG Enter a Short Document/Title Name Here DESCRIPTION PACKAGE Super Low Noise and High Gain Micro-X plastic package Hollow (Air Cavity) Plastic package FEATURES Super Low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.7 dB TYP. @VDS = 2 V, ID = 10 mA, f = 12 GHz APPLI... See More ⇒
Detailed specifications: IRFS641, IRF720B, IRFS720B, AF2301P, APM2071PD, AMS4004, AMS4210, B1M160120HC, 7N60, C2M1000170J, C3M0065090D, C3M0065100K, C3M0120090D, C3M0120090J, 2N7002ED, 2N7002ET, 2N7002EW
Keywords - CE3512K2 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: C2M1000170J | MSJU11N65
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