All MOSFET. CE3512K2 Datasheet

 

CE3512K2 Datasheet and Replacement


   Type Designator: CE3512K2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 4 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 0.027 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 19 Ohm
   Package: MICRO-X
 

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CE3512K2 Datasheet (PDF)

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CE3512K2

RF Low Noise FET CE3512K2 12 GHz Super Low Noise FET in Hollow Plastic PKG Enter a Short Document/Title Name Here DESCRIPTION PACKAGE Super Low Noise and High Gain Micro-X plastic package Hollow (Air Cavity) Plastic package FEATURES Super Low noise figure and high associated gain: NF = 0.30 dB TYP., Ga = 13.7 dB TYP. @VDS = 2 V, ID = 10 mA, f = 12 GHz APPLI

Datasheet: IRFS641 , IRF720B , IRFS720B , AF2301P , APM2071PD , AMS4004 , AMS4210 , B1M160120HC , 7N60 , C2M1000170J , C3M0065090D , C3M0065100K , C3M0120090D , C3M0120090J , 2N7002ED , 2N7002ET , 2N7002EW .

History: AON6408 | 2SK4066-E

Keywords - CE3512K2 MOSFET datasheet

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