C3M0065090D PDF and Equivalents Search

 

C3M0065090D Specs and Replacement

Type Designator: C3M0065090D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 19 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm

Package: TO247

C3M0065090D substitution

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C3M0065090D datasheet

 ..1. Size:1010K  cree
 c3m0065090d.pdf pdf_icon

C3M0065090D

VDS 900 V ID @ 25 C 36 A C3M0065090D RDS(on) 65 m Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits ... See More ⇒

 7.1. Size:1218K  cree
 c3m0065100k.pdf pdf_icon

C3M0065090D

VDS 1000 V ID @ 25 C 35 A C3M0065100K RDS(on) 65 m Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package New C3MTM SiC MOSFET technology TAB Optimized package with separate driver source pin Drain 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switc... See More ⇒

Detailed specifications: IRFS720B, AF2301P, APM2071PD, AMS4004, AMS4210, B1M160120HC, CE3512K2, C2M1000170J, IRFZ46N, C3M0065100K, C3M0120090D, C3M0120090J, 2N7002ED, 2N7002ET, 2N7002EW, AD50N06S, AD90N03S

Keywords - C3M0065090D MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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