C3M0065100K Datasheet and Replacement
Type Designator: C3M0065100K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 113.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 19 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
Package: TO247-4
- MOSFET Cross-Reference Search
C3M0065100K Datasheet (PDF)
c3m0065100k.pdf

VDS 1000 VID @ 25C 35 AC3M0065100K RDS(on) 65 m Silicon Carbide Power MOSFET TM C3M MOSFET TechnologyN-Channel Enhancement ModeFeatures Package New C3MTM SiC MOSFET technologyTAB Optimized package with separate driver source pinDrain 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switc
c3m0065090d.pdf

VDS 900 VID @ 25C 36 AC3M0065090D RDS(on) 65 m Silicon Carbide Power MOSFET TM C3M MOSFET TechnologyN-Channel Enhancement ModeFeatures Package C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliantBenefits
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CHM85A3PAGP | SQ9407EY-T1 | TK7P65W | ALD1103DB | SFFX054Z
Keywords - C3M0065100K MOSFET datasheet
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History: CHM85A3PAGP | SQ9407EY-T1 | TK7P65W | ALD1103DB | SFFX054Z



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