All MOSFET. C3M0065100K Datasheet

 

C3M0065100K Datasheet and Replacement


   Type Designator: C3M0065100K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 113.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 19 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
   Package: TO247-4
 

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C3M0065100K Datasheet (PDF)

 ..1. Size:1218K  cree
 c3m0065100k.pdf pdf_icon

C3M0065100K

VDS 1000 VID @ 25C 35 AC3M0065100K RDS(on) 65 m Silicon Carbide Power MOSFET TM C3M MOSFET TechnologyN-Channel Enhancement ModeFeatures Package New C3MTM SiC MOSFET technologyTAB Optimized package with separate driver source pinDrain 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switc

 7.1. Size:1010K  cree
 c3m0065090d.pdf pdf_icon

C3M0065100K

VDS 900 VID @ 25C 36 AC3M0065090D RDS(on) 65 m Silicon Carbide Power MOSFET TM C3M MOSFET TechnologyN-Channel Enhancement ModeFeatures Package C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliantBenefits

Datasheet: AF2301P , APM2071PD , AMS4004 , AMS4210 , B1M160120HC , CE3512K2 , C2M1000170J , C3M0065090D , IRF1405 , C3M0120090D , C3M0120090J , 2N7002ED , 2N7002ET , 2N7002EW , AD50N06S , AD90N03S , AO6385 .

History: CS65N20-30 | IPB120N08S4-03 | SQM90142E

Keywords - C3M0065100K MOSFET datasheet

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