All MOSFET. C3M0065100K Datasheet

 

C3M0065100K Datasheet and Replacement


   Type Designator: C3M0065100K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 113.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 19 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
   Package: TO247-4
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C3M0065100K Datasheet (PDF)

 ..1. Size:1218K  cree
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C3M0065100K

VDS 1000 VID @ 25C 35 AC3M0065100K RDS(on) 65 m Silicon Carbide Power MOSFET TM C3M MOSFET TechnologyN-Channel Enhancement ModeFeatures Package New C3MTM SiC MOSFET technologyTAB Optimized package with separate driver source pinDrain 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switc

 7.1. Size:1010K  cree
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C3M0065100K

VDS 900 VID @ 25C 36 AC3M0065090D RDS(on) 65 m Silicon Carbide Power MOSFET TM C3M MOSFET TechnologyN-Channel Enhancement ModeFeatures Package C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliantBenefits

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CHM85A3PAGP | SQ9407EY-T1 | TK7P65W | ALD1103DB | SFFX054Z

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