C3M0065100K MOSFET Datasheet: N-Ch, 1000V, 35A. Full specification with pinout and replacement list

C3M0065100K Specs and Replacement

Type Designator: C3M0065100K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 113.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 19 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm

Package: TO247-4

C3M0065100K substitution

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C3M0065100K datasheet

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VDS 1000 V ID @ 25 C 35 A C3M0065100K RDS(on) 65 m Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package New C3MTM SiC MOSFET technology TAB Optimized package with separate driver source pin Drain 8mm of creepage distance between drain and source High blocking voltage with low on-resistance High-speed switc... See More ⇒

7.1. Size:1010K cree
c3m0065090d.pdf pdf_icon

VDS 900 V ID @ 25 C 36 A C3M0065090D RDS(on) 65 m Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits ... See More ⇒

Detailed specifications: AF2301P, APM2071PD, AMS4004, AMS4210, B1M160120HC, CE3512K2, C2M1000170J, C3M0065090D, IRF830, C3M0120090D, C3M0120090J, 2N7002ED, 2N7002ET, 2N7002EW, AD50N06S, AD90N03S, AO6385