C3M0120090D MOSFET Datasheet: N-Ch, 900V, 23A. Full specification with pinout and replacement list

C3M0120090D Specs and Replacement

Type Designator: C3M0120090D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 97 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 19 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm

Package: TO247

C3M0120090D substitution

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C3M0120090D datasheet

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VDS 900 V ID @ 25 C 23 A C3M0120090D RDS(on) 120 m Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits ... See More ⇒

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VDS 900 V ID @ 25 C 22 A C3M0120090J RDS(on) 120 m Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package New C3M SiC MOSFET technology TAB Drain High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package with driver source Fast intrinsic diode with low ... See More ⇒

Detailed specifications: APM2071PD, AMS4004, AMS4210, B1M160120HC, CE3512K2, C2M1000170J, C3M0065090D, C3M0065100K, IRLB3034, C3M0120090J, 2N7002ED, 2N7002ET, 2N7002EW, AD50N06S, AD90N03S, AO6385, AS0130KA