C3M0120090D MOSFET. Datasheet pdf. Equivalent
Type Designator: C3M0120090D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 97 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 19 V
|Id|ⓘ - Maximum Drain Current: 23 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 40 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm
Package: TO247
C3M0120090D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
C3M0120090D Datasheet (PDF)
c3m0120090d.pdf
VDS 900 VID @ 25C 23 AC3M0120090D RDS(on) 120 m Silicon Carbide Power MOSFET TM C3M MOSFET TechnologyN-Channel Enhancement ModeFeatures Package C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliantBenefits
c3m0120090j.pdf
VDS 900 VID @ 25C 22 AC3M0120090J RDS(on) 120 m Silicon Carbide Power MOSFET TM C3M MOSFET TechnologyN-Channel Enhancement ModeFeatures Package New C3M SiC MOSFET technologyTAB Drain High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package with driver source Fast intrinsic diode with low
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