C3M0120090J Specs and Replacement
Type Designator: C3M0120090J
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm
Package: D2PAK-7L
C3M0120090J substitution
- MOSFET ⓘ Cross-Reference Search
C3M0120090J datasheet
c3m0120090j.pdf
VDS 900 V ID @ 25 C 22 A C3M0120090J RDS(on) 120 m Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package New C3M SiC MOSFET technology TAB Drain High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package with driver source Fast intrinsic diode with low ... See More ⇒
c3m0120090d.pdf
VDS 900 V ID @ 25 C 23 A C3M0120090D RDS(on) 120 m Silicon Carbide Power MOSFET TM C3M MOSFET Technology N-Channel Enhancement Mode Features Package C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits ... See More ⇒
Detailed specifications: AMS4004, AMS4210, B1M160120HC, CE3512K2, C2M1000170J, C3M0065090D, C3M0065100K, C3M0120090D, IRF9640, 2N7002ED, 2N7002ET, 2N7002EW, AD50N06S, AD90N03S, AO6385, AS0130KA, AS2003M
Keywords - C3M0120090J MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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