All MOSFET. C3M0120090J Datasheet

 

C3M0120090J Datasheet and Replacement


   Type Designator: C3M0120090J
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm
   Package: D2PAK-7L
 

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C3M0120090J Datasheet (PDF)

 ..1. Size:1031K  cree
 c3m0120090j.pdf pdf_icon

C3M0120090J

VDS 900 VID @ 25C 22 AC3M0120090J RDS(on) 120 m Silicon Carbide Power MOSFET TM C3M MOSFET TechnologyN-Channel Enhancement ModeFeatures Package New C3M SiC MOSFET technologyTAB Drain High blocking voltage with low On-resistance High speed switching with low capacitances New low impedance package with driver source Fast intrinsic diode with low

 4.1. Size:897K  cree
 c3m0120090d.pdf pdf_icon

C3M0120090J

VDS 900 VID @ 25C 23 AC3M0120090D RDS(on) 120 m Silicon Carbide Power MOSFET TM C3M MOSFET TechnologyN-Channel Enhancement ModeFeatures Package C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliantBenefits

Datasheet: AMS4004 , AMS4210 , B1M160120HC , CE3512K2 , C2M1000170J , C3M0065090D , C3M0065100K , C3M0120090D , IRF9640 , 2N7002ED , 2N7002ET , 2N7002EW , AD50N06S , AD90N03S , AO6385 , AS0130KA , AS2003M .

History: BUZ32H | 2SK641 | BUZ94 | IRF7702PBF | ELM32416LA | FQB34N20 | UPA1728

Keywords - C3M0120090J MOSFET datasheet

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