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AD50N06S Specs and Replacement

Type Designator: AD50N06S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.1 nS

Cossⓘ - Output Capacitance: 159 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0205 Ohm

Package: TO252

AD50N06S substitution

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AD50N06S datasheet

 ..1. Size:1054K  anbon
 ad50n06s.pdf pdf_icon

AD50N06S

AD50N06S N-Channel Enhancement Mode Power MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 60V 20m @10V 50A Feature Application High density cell design for ultra low Rdson Power switching application Fully characterized avalanche voltage and current Hard switched and high frequency circuits Good stability and uniformity with high EAS Uninterruptible power supply Excellent p... See More ⇒

Detailed specifications: C2M1000170J, C3M0065090D, C3M0065100K, C3M0120090D, C3M0120090J, 2N7002ED, 2N7002ET, 2N7002EW, EMB04N03H, AD90N03S, AO6385, AS0130KA, AS2003M, AS2101W, AS2102W, AS2300, AS2301

Keywords - AD50N06S MOSFET specs

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