AD90N03S Specs and Replacement
Type Designator: AD90N03S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 105 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 360 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: TO252
AD90N03S substitution
- MOSFET ⓘ Cross-Reference Search
AD90N03S datasheet
ad90n03s.pdf
AD90N03S N-Channel Enhancement Mode Power MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 5.8m @10V 30V 90A 8.0m @4.5V Feature Application High density cell design for ultra low Rdson DC/DC converters Fully characterized avalanche voltage and current Synchronous Rectifier Good stability and uniformity with high EAS Excellent package for good heat dissipation Package ... See More ⇒
Detailed specifications: C3M0065090D, C3M0065100K, C3M0120090D, C3M0120090J, 2N7002ED, 2N7002ET, 2N7002EW, AD50N06S, RU7088R, AO6385, AS0130KA, AS2003M, AS2101W, AS2102W, AS2300, AS2301, AS2302
Keywords - AD90N03S MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: MEM4N60A3G | SW4N60 | SE9926 | AP60U03GH | AP9972AGP | SE20P03 | STFI13N95K3
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