All MOSFET. AD90N03S Datasheet

 

AD90N03S MOSFET. Datasheet pdf. Equivalent


   Type Designator: AD90N03S
   Marking Code: D90N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 105 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
   Maximum Drain Current |Id|: 90 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 60 nC
   Rise Time (tr): 15 nS
   Drain-Source Capacitance (Cd): 360 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0058 Ohm
   Package: TO252

 AD90N03S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AD90N03S Datasheet (PDF)

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 ad90n03s.pdf

AD90N03S AD90N03S

AD90N03S N-Channel Enhancement Mode Power MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 5.8m@10V 30V 90A 8.0m@4.5V Feature Application High density cell design for ultra low Rdson DC/DC converters Fully characterized avalanche voltage and current Synchronous Rectifier Good stability and uniformity with high EAS Excellent package for good heat dissipation Package

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