All MOSFET. AD90N03S Datasheet

 

AD90N03S MOSFET. Datasheet pdf. Equivalent


   Type Designator: AD90N03S
   Marking Code: D90N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TO252

 AD90N03S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AD90N03S Datasheet (PDF)

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ad90n03s.pdf

AD90N03S
AD90N03S

AD90N03S N-Channel Enhancement Mode Power MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 5.8m@10V 30V 90A 8.0m@4.5V Feature Application High density cell design for ultra low Rdson DC/DC converters Fully characterized avalanche voltage and current Synchronous Rectifier Good stability and uniformity with high EAS Excellent package for good heat dissipation Package

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