AS2003M PDF and Equivalents Search

 

AS2003M Specs and Replacement

Type Designator: AS2003M

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.2 nS

Cossⓘ - Output Capacitance: 48 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SOT23-6L

AS2003M substitution

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AS2003M datasheet

 ..1. Size:1445K  anbon
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AS2003M

AS2003M N and P-Channel Enhancement Mode MOSFET Product Summary V R I V R I (BR)DSS DS(on)MAX D (BR)DSS DS(on)MAX D 35m @4.5V 75m @-4.5V 20V 3A -20V -3A 55m @2.5V 100m @-2.5V Feature Application Advanced trench process technology Battery protection High density cell design for ultra low on-resistance Switching application Package Circuit diagram SOT-23... See More ⇒

Detailed specifications: C3M0120090J, 2N7002ED, 2N7002ET, 2N7002EW, AD50N06S, AD90N03S, AO6385, AS0130KA, AO4407A, AS2101W, AS2102W, AS2300, AS2301, AS2302, AS2303, AS2304, AS2305

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