All MOSFET. AS2003M Datasheet

 

AS2003M Datasheet and Replacement


   Type Designator: AS2003M
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOT23-6L
 

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AS2003M Datasheet (PDF)

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AS2003M

AS2003M N and P-Channel Enhancement Mode MOSFETProduct Summary V R I V R I (BR)DSS DS(on)MAX D (BR)DSS DS(on)MAX D35m@4.5V 75m@-4.5V 20V 3A -20V -3A 55m@2.5V 100m@-2.5V Feature Application Advanced trench process technology Battery protection High density cell design for ultra low on-resistance Switching application Package Circuit diagram SOT-23

Datasheet: C3M0120090J , 2N7002ED , 2N7002ET , 2N7002EW , AD50N06S , AD90N03S , AO6385 , AS0130KA , AO3407 , AS2101W , AS2102W , AS2300 , AS2301 , AS2302 , AS2303 , AS2304 , AS2305 .

History: H6968S | AOLF66610 | TPCS8303 | HM20N15K | RFH35N10 | TSM1NB60CH | IPB90N06S4L-04

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