BM2300 Datasheet and Replacement. Cross Reference Search

BM2300 Datasheet (PDF)

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BM2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The BM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook

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BM2300MOSFET ROHSN-Channel MOSFET SOT-23-FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-Resistance Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.)Parameter Symbol Limit UnitDrain-Source Voltage V 20 DSV Gate-Source Voltage V 12 GSContinuous Drain Cur

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VBM2309www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.0092 at VGS = - 10 V - 60 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.0128 at VGS = - 4.5 V - 55APPLICATIONS Load SwitchTO-220AB Notebook Adaptor SwitchS G G D STop View

Datasheet: AS2102W , AS2300 , AS2301 , AS2302 , AS2303 , AS2304 , AS2305 , AS2307 , IRF540 , BM3402 , BM3407A , BM3415E , BM3416E , BML6401 , BML6402 , SI2301-P , SI2301S .