BM2300 - аналоги, параметры транзистора - Справочник транзисторов

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BM2300 N Channel Enhancement Mode MOSFET 4A DESCRIPTION The BM2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook

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BM2300 MOSFET ROHS N-Channel MOSFET SOT-23 - Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) Parameter Symbol Limit Unit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 12 GS Continuous Drain Cur

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VBM2309 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.0092 at VGS = - 10 V - 60 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.0128 at VGS = - 4.5 V - 55 APPLICATIONS Load Switch TO-220AB Notebook Adaptor Switch S G G D S Top View

Другие MOSFET... AS2102W , AS2300 , AS2301 , AS2302 , AS2303 , AS2304 , AS2305 , AS2307 , IRF540N , BM3402 , BM3407A , BM3415E , BM3416E , BML6401 , BML6402 , SI2301-P , SI2301S .