All MOSFET. BM3416E Datasheet

 

BM3416E Datasheet and Replacement


   Type Designator: BM3416E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 345 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT23
 

 BM3416E substitution

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BM3416E Datasheet (PDF)

 ..1. Size:1829K  born
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BM3416E

BM3416EMOSFET ROHSN-Channel Enhancement-Mode MOSFET SOT-23-Features Low RDS(on) @VGS=4.5V 3.3V Logic Level Control N Channel SOT23 Package HMB ESD Protection 2KV Pb-Free, RoHS CompliantApplications DC-to-DC converters Power management in battery-driven portablesV R Typ I Max (BR)DSS DS(ON) D Low-side load switch and charging switch for

 9.1. Size:1369K  born
 bm3415e.pdf pdf_icon

BM3416E

BM3415EMOSFET ROHSP-Channel Enhancement-Mode MOSFET SOT-23-Features Low RDS(on) @VGS=-4.5V -3.3V Logic Level Control P Channel SOT23 Package HMB ESD Protection 2KV Pb-Free, RoHS CompliantApplicationsV R Typ I Max(BR)DSS DS(ON) D Load Switch37m @-4.5V Switching circuits-20V -4.8A High-speed line driver43m @ -3.3V Power Manage

Datasheet: AS2303 , AS2304 , AS2305 , AS2307 , BM2300 , BM3402 , BM3407A , BM3415E , IRFZ44 , BML6401 , BML6402 , SI2301-P , SI2301S , SI2302S , SI2333 , ASDM20N12ZB , ASDM20P09ZB .

History: RQA0009TXDQS | RQA0008RXDQS

Keywords - BM3416E MOSFET datasheet

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