BM3416E MOSFET Datasheet: N-Ch, 20V, 6.5A. Full specification with pinout and replacement list

BM3416E Specs and Replacement

Type Designator: BM3416E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 345 nS

Cossⓘ - Output Capacitance: 108 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOT23

BM3416E substitution

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BM3416E datasheet

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BM3416E MOSFET ROHS N-Channel Enhancement-Mode MOSFET SOT-23 - Features Low RDS(on) @VGS=4.5V 3.3V Logic Level Control N Channel SOT23 Package HMB ESD Protection 2KV Pb-Free, RoHS Compliant Applications DC-to-DC converters Power management in battery-driven portables V R Typ I Max (BR)DSS DS(ON) D Low-side load switch and charging switch for ... See More ⇒

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BM3415E MOSFET ROHS P-Channel Enhancement-Mode MOSFET SOT-23 - Features Low RDS(on) @VGS=-4.5V -3.3V Logic Level Control P Channel SOT23 Package HMB ESD Protection 2KV Pb-Free, RoHS Compliant Applications V R Typ I Max (BR)DSS DS(ON) D Load Switch 37m @-4.5V Switching circuits -20V -4.8A High-speed line driver 43m @ -3.3V Power Manage... See More ⇒

Detailed specifications: AS2303, AS2304, AS2305, AS2307, BM2300, BM3402, BM3407A, BM3415E, IRFZ44, BML6401, BML6402, SI2301-P, SI2301S, SI2302S, SI2333, ASDM20N12ZB, ASDM20P09ZB