All MOSFET. BM3416E Datasheet

 

BM3416E MOSFET. Datasheet pdf. Equivalent


   Type Designator: BM3416E
   Marking Code: A6EF3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 6.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.3 nC
   trⓘ - Rise Time: 345 nS
   Cossⓘ - Output Capacitance: 108 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT23

 BM3416E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BM3416E Datasheet (PDF)

 ..1. Size:1829K  born
 bm3416e.pdf

BM3416E BM3416E

BM3416EMOSFET ROHSN-Channel Enhancement-Mode MOSFET SOT-23-Features Low RDS(on) @VGS=4.5V 3.3V Logic Level Control N Channel SOT23 Package HMB ESD Protection 2KV Pb-Free, RoHS CompliantApplications DC-to-DC converters Power management in battery-driven portablesV R Typ I Max (BR)DSS DS(ON) D Low-side load switch and charging switch for

 9.1. Size:1369K  born
 bm3415e.pdf

BM3416E BM3416E

BM3415EMOSFET ROHSP-Channel Enhancement-Mode MOSFET SOT-23-Features Low RDS(on) @VGS=-4.5V -3.3V Logic Level Control P Channel SOT23 Package HMB ESD Protection 2KV Pb-Free, RoHS CompliantApplicationsV R Typ I Max(BR)DSS DS(ON) D Load Switch37m @-4.5V Switching circuits-20V -4.8A High-speed line driver43m @ -3.3V Power Manage

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