BML6401 MOSFET Datasheet: P-Ch, 12V, 4.3A. Full specification with pinout and replacement list

BML6401 Specs and Replacement

Type Designator: BML6401

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOT23

BML6401 substitution

- MOSFET ⓘ Cross-Reference Search

BML6401 datasheet

..1. Size:4041K born
bml6401.pdf pdf_icon

BML6401 MOSFET ROHS P-Channel MOSFET SOT-23 - Features Ultra low on-resistance. Fast switching. Marking 6401 Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) Parameter Symbol Rating Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS 8 ID Continuous Drain Current VGS=4.5V @ TA=25 -4.3 ... See More ⇒

8.1. Size:1348K born
bml6402.pdf pdf_icon

BML6402 MOSFET ROHS P-Channel Enhancement-Mode MOSFET SOT-23 - Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance MAXIMUM RANTINGS Characteristic Symbol Max Unit Drain-Source Voltage BV -20 V DSS Gate- Source Voltage V +12 V GS Drain Current (continuous) I -3.7 A D Drain Current (pulsed) I -15 A DM Total Device Dis... See More ⇒

Detailed specifications: AS2304, AS2305, AS2307, BM2300, BM3402, BM3407A, BM3415E, BM3416E, IRF640, BML6402, SI2301-P, SI2301S, SI2302S, SI2333, ASDM20N12ZB, ASDM20P09ZB, ASDM2301ZA