BML6401 Datasheet and Replacement
Type Designator: BML6401
Marking Code: 6401
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
|Id|ⓘ - Maximum Drain Current: 4.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 180 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOT23
BML6401 Datasheet (PDF)
bml6401.pdf

BML6401MOSFET ROHSP-Channel MOSFET SOT-23-Features Ultra low on-resistance. Fast switching.Marking: 6401 Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) Parameter Symbol Rating Unit Drain-Source Voltage VDS -12V Gate-Source Voltage VGS8ID Continuous Drain Current VGS=4.5V @ TA=25 -4.3
bml6402.pdf

BML6402MOSFET ROHSP-Channel Enhancement-Mode MOSFET SOT-23-FeaturesAdvanced trench process technology High Density Cell Design For Ultra Low On-ResistanceMAXIMUM RANTINGSCharacteristic Symbol Max UnitDrain-Source Voltage BV -20 VDSSGate- Source VoltageV +12 VGSDrain Current (continuous)I -3.7 ADDrain Current (pulsed) I -15 ADMTotal Device Dis
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: AFN7412 | IPP35CN10N
Keywords - BML6401 MOSFET datasheet
BML6401 cross reference
BML6401 equivalent finder
BML6401 lookup
BML6401 substitution
BML6401 replacement
History: AFN7412 | IPP35CN10N



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