All MOSFET. BML6402 Datasheet

 

BML6402 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BML6402
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 3.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   tonⓘ - Turn-on Time: 8 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT23

 BML6402 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BML6402 Datasheet (PDF)

 ..1. Size:1348K  born
 bml6402.pdf

BML6402 BML6402

BML6402MOSFET ROHSP-Channel Enhancement-Mode MOSFET SOT-23-FeaturesAdvanced trench process technology High Density Cell Design For Ultra Low On-ResistanceMAXIMUM RANTINGSCharacteristic Symbol Max UnitDrain-Source Voltage BV -20 VDSSGate- Source VoltageV +12 VGSDrain Current (continuous)I -3.7 ADDrain Current (pulsed) I -15 ADMTotal Device Dis

 8.1. Size:4041K  born
 bml6401.pdf

BML6402 BML6402

BML6401MOSFET ROHSP-Channel MOSFET SOT-23-Features Ultra low on-resistance. Fast switching.Marking: 6401 Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) Parameter Symbol Rating Unit Drain-Source Voltage VDS -12V Gate-Source Voltage VGS8ID Continuous Drain Current VGS=4.5V @ TA=25 -4.3

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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