All MOSFET. BML6402 Datasheet

 

BML6402 Datasheet and Replacement


   Type Designator: BML6402
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   ton ⓘ - Turn-on Time: 8 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT23
 

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BML6402 Datasheet (PDF)

 ..1. Size:1348K  born
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BML6402

BML6402MOSFET ROHSP-Channel Enhancement-Mode MOSFET SOT-23-FeaturesAdvanced trench process technology High Density Cell Design For Ultra Low On-ResistanceMAXIMUM RANTINGSCharacteristic Symbol Max UnitDrain-Source Voltage BV -20 VDSSGate- Source VoltageV +12 VGSDrain Current (continuous)I -3.7 ADDrain Current (pulsed) I -15 ADMTotal Device Dis

 8.1. Size:4041K  born
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BML6402

BML6401MOSFET ROHSP-Channel MOSFET SOT-23-Features Ultra low on-resistance. Fast switching.Marking: 6401 Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) Parameter Symbol Rating Unit Drain-Source Voltage VDS -12V Gate-Source Voltage VGS8ID Continuous Drain Current VGS=4.5V @ TA=25 -4.3

Datasheet: AS2305 , AS2307 , BM2300 , BM3402 , BM3407A , BM3415E , BM3416E , BML6401 , IRF1404 , SI2301-P , SI2301S , SI2302S , SI2333 , ASDM20N12ZB , ASDM20P09ZB , ASDM2301ZA , ASDM3010 .

Keywords - BML6402 MOSFET datasheet

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