All MOSFET. ASDM20P09ZB Datasheet

 

ASDM20P09ZB Datasheet and Replacement


   Type Designator: ASDM20P09ZB
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: SOT23
 

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ASDM20P09ZB Datasheet (PDF)

 ..1. Size:368K  ascend
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ASDM20P09ZB

ASDM20P09ZB-20V P-Channel MOSFETProduct SummaryGeneral Features R

 8.1. Size:491K  ascend
 asdm20n12zb.pdf pdf_icon

ASDM20P09ZB

ASDM20N12ZB20V N-CHANNEL MOSFETProduct SummaryFeatures 20V/12AV DS 20 V Super High Dense Cell DesignR DS(on),Typ@ VGS=4.5 V 11.5 m Reliable and RuggedI D 12 A Lead Free Available (RoHS Compliant)Applications Portable Equipment and Battery Powered Systems. DC-DC converter Load Switch Top viewDGSSOT-23-3Absolute Maximum Ratings (TA=25C Unless O

 9.1. Size:830K  ascend
 asdm2301za.pdf pdf_icon

ASDM20P09ZB

ASDM2301ZA20V P-CHANNEL MOSFET FeaturesProduct Summary High Power and current handing capabilityVDSS RDS(ON) RDS(ON) ID Lead free product is acquired(Typ) (Typ) @-4.5V @-2.5V Surface Mount Package-20V65m 83m -3AApplication PWM applicationsLoad switchPower managementtop viewDGSOT-23 Absolute Maximum Ratings (TA=25unless other

Datasheet: BM3416E , BML6401 , BML6402 , SI2301-P , SI2301S , SI2302S , SI2333 , ASDM20N12ZB , AON6414A , ASDM2301ZA , ASDM3010 , ASDM3010S , ASDM3020 , ASDM3050 , ASDM3080KQ , ASDM30N55E , ASDM30N65E .

History: SEFN9140 | SFF80N20P

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