CR4N65FA9K MOSFET Datasheet: N-Ch, 650V, 4A. Full specification with pinout and replacement list

CR4N65FA9K Specs and Replacement

Type Designator: CR4N65FA9K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 15.8 nC

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 41 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: TO220F

CR4N65FA9K substitution

- MOSFET ⓘ Cross-Reference Search

CR4N65FA9K datasheet

..1. Size:437K crhj
cr4n65fa9k.pdf pdf_icon

Silicon N-Channel Power MOSFET CR4N65F A9K General Description VDSS 650 V CR4N65F A9K, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switchi... See More ⇒

8.1. Size:434K crhj
cr4n65a4k.pdf pdf_icon

Silicon N-Channel Power MOSFET CR4N65 A4K General Description VDSS 650 V CR4N65 A4K, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching... See More ⇒

Detailed specifications: ASDM3404ZA, ASDM40N52, ASDM40N80Q, ASDM4406S, ASDM4410S, ASDM4614S, ASDM65N18S, CR4N65A4K, SKD502T, CRJD390N65GC, CRSD082N10L2, CRSE120N10L2, CRSM053N08N, CRST040N10N, CRSS037N10N, CRST041N08N, CRSS038N08N