CRJD390N65GC Specs and Replacement
Type Designator: CRJD390N65GC
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 32 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO252
CRJD390N65GC substitution
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CRJD390N65GC datasheet
crjd390n65gc.pdf
CRJD390N65GC ( ) SJMOS N-MOSFET 650V, 0.39 , 11A Features Product Summary CRM(CQ) Super_Junction technology Much lower Ron*A performance for On-state efficiency VDS 650V RDS(on)_typ Much lower FOM for fast switching efficiency 0.39 ID 11A Applications LED/LCD/PDP TV and monitor Lighting 100% Avalanche Tested 100% Avalanche Tested ... See More ⇒
Detailed specifications: ASDM40N52, ASDM40N80Q, ASDM4406S, ASDM4410S, ASDM4614S, ASDM65N18S, CR4N65A4K, CR4N65FA9K, K4145, CRSD082N10L2, CRSE120N10L2, CRSM053N08N, CRST040N10N, CRSS037N10N, CRST041N08N, CRSS038N08N, CRST045N10N
Keywords - CRJD390N65GC MOSFET specs
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