All MOSFET. CRSD082N10L2 Datasheet

 

CRSD082N10L2 Datasheet and Replacement


   Type Designator: CRSD082N10L2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 101 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 78 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 457 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm
   Package: TO252
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CRSD082N10L2 Datasheet (PDF)

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CRSD082N10L2

CRSD082N10L2() SkyMOS2 N-MOSFET 100V, 7.2m, 78AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS2 technology 100V Extremely low on-resistance RDS(on) RDS(on)@10V typ7.2m Excellent QgxRDS(on) product(FOM) RDS(on)@4.5V typ9mID Qualified according to JEDEC criteria 78AApplications Synchronous Rectification for

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: MTP4N40E | WMM10N65C4 | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003

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