CRSD082N10L2 PDF and Equivalents Search

 

CRSD082N10L2 Specs and Replacement

Type Designator: CRSD082N10L2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 101 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 78 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 62 nS

Cossⓘ - Output Capacitance: 457 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm

Package: TO252

CRSD082N10L2 substitution

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CRSD082N10L2 datasheet

 ..1. Size:588K  crhj
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CRSD082N10L2

CRSD082N10L2 ( ) SkyMOS2 N-MOSFET 100V, 7.2m , 78A Features Product Summary VDS Uses CRM(CQ) advanced SkyMOS2 technology 100V Extremely low on-resistance RDS(on) RDS(on)@10V typ 7.2m Excellent QgxRDS(on) product(FOM) RDS(on)@4.5V typ 9m ID Qualified according to JEDEC criteria 78A Applications Synchronous Rectification for... See More ⇒

Detailed specifications: ASDM40N80Q, ASDM4406S, ASDM4410S, ASDM4614S, ASDM65N18S, CR4N65A4K, CR4N65FA9K, CRJD390N65GC, 13N50, CRSE120N10L2, CRSM053N08N, CRST040N10N, CRSS037N10N, CRST041N08N, CRSS038N08N, CRST045N10N, CRSS042N10N

Keywords - CRSD082N10L2 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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