CRSD082N10L2 Specs and Replacement
Type Designator: CRSD082N10L2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 101 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 78 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 457 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm
Package: TO252
CRSD082N10L2 substitution
- MOSFET ⓘ Cross-Reference Search
CRSD082N10L2 datasheet
crsd082n10l2.pdf
CRSD082N10L2 ( ) SkyMOS2 N-MOSFET 100V, 7.2m , 78A Features Product Summary VDS Uses CRM(CQ) advanced SkyMOS2 technology 100V Extremely low on-resistance RDS(on) RDS(on)@10V typ 7.2m Excellent QgxRDS(on) product(FOM) RDS(on)@4.5V typ 9m ID Qualified according to JEDEC criteria 78A Applications Synchronous Rectification for... See More ⇒
Detailed specifications: ASDM40N80Q, ASDM4406S, ASDM4410S, ASDM4614S, ASDM65N18S, CR4N65A4K, CR4N65FA9K, CRJD390N65GC, 13N50, CRSE120N10L2, CRSM053N08N, CRST040N10N, CRSS037N10N, CRST041N08N, CRSS038N08N, CRST045N10N, CRSS042N10N
Keywords - CRSD082N10L2 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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