All MOSFET. CRSE120N10L2 Datasheet

 

CRSE120N10L2 Datasheet and Replacement


   Type Designator: CRSE120N10L2
   Marking Code: SE120N10L2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 28.2 nC
   tr ⓘ - Rise Time: 81 nS
   Cossⓘ - Output Capacitance: 277 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0132 Ohm
   Package: SOP8
 

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CRSE120N10L2 Datasheet (PDF)

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CRSE120N10L2

CRSE120N10L2() SkyMOS2 N-MOSFET 100, 11.0m, 11AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS2 technology 100 Extremely low on-resistance RDS(on) RDS(on)@10V typ11.0m Excellent QgxRDS(on) product(FOM) RDS(on)@4.5V typ14.0mID Qualified according to JEDEC criteria 11AApplications Synchronous Rectification f

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