CRSE120N10L2 Specs and Replacement
Type Designator: CRSE120N10L2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 81 nS
Cossⓘ - Output Capacitance: 277 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0132 Ohm
Package: SOP8
CRSE120N10L2 substitution
- MOSFET ⓘ Cross-Reference Search
CRSE120N10L2 datasheet
crse120n10l2.pdf
CRSE120N10L2 ( ) SkyMOS2 N-MOSFET 100, 11.0m , 11A Features Product Summary VDS Uses CRM(CQ) advanced SkyMOS2 technology 100 Extremely low on-resistance RDS(on) RDS(on)@10V typ 11.0m Excellent QgxRDS(on) product(FOM) RDS(on)@4.5V typ 14.0m ID Qualified according to JEDEC criteria 11A Applications Synchronous Rectification f... See More ⇒
Detailed specifications: ASDM4406S, ASDM4410S, ASDM4614S, ASDM65N18S, CR4N65A4K, CR4N65FA9K, CRJD390N65GC, CRSD082N10L2, AON7410, CRSM053N08N, CRST040N10N, CRSS037N10N, CRST041N08N, CRSS038N08N, CRST045N10N, CRSS042N10N, CRST049N08N
Keywords - CRSE120N10L2 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: HAT2029RJ | APT10035JFLL
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