CRSE120N10L2 MOSFET. Datasheet pdf. Equivalent
Type Designator: CRSE120N10L2
Marking Code: SE120N10L2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 28.2 nC
trⓘ - Rise Time: 81 nS
Cossⓘ - Output Capacitance: 277 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0132 Ohm
Package: SOP8
CRSE120N10L2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CRSE120N10L2 Datasheet (PDF)
..1. Size:457K crhj
crse120n10l2.pdf
crse120n10l2.pdf
CRSE120N10L2() SkyMOS2 N-MOSFET 100, 11.0m, 11AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS2 technology 100 Extremely low on-resistance RDS(on) RDS(on)@10V typ11.0m Excellent QgxRDS(on) product(FOM) RDS(on)@4.5V typ14.0mID Qualified according to JEDEC criteria 11AApplications Synchronous Rectification f
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
