CRSM053N08N Datasheet and Replacement
Type Designator: CRSM053N08N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 38.9 nS
Cossⓘ - Output Capacitance: 1057 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
Package: DFN5X6
CRSM053N08N substitution
CRSM053N08N Datasheet (PDF)
crsm053n08n.pdf
CRSM053N08N() SkyMOS1 N-MOSFET 85V, 4.7m, 60AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on)4.7m Excellent QgxRDS(on) product(FOM) ID 60A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100% Avalanche T
crsm053n08n.pdf
CRSM053N08N() SkyMOS1 N-MOSFET 85V, 4.7m, 60AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on)4.7m Excellent QgxRDS(on) product(FOM) ID 60A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100% Avalanche T
Datasheet: ASDM4410S , ASDM4614S , ASDM65N18S , CR4N65A4K , CR4N65FA9K , CRJD390N65GC , CRSD082N10L2 , CRSE120N10L2 , 4N60 , CRST040N10N , CRSS037N10N , CRST041N08N , CRSS038N08N , CRST045N10N , CRSS042N10N , CRST049N08N , CRSS046N08N .
History: TPH1R712MD
Keywords - CRSM053N08N MOSFET datasheet
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History: TPH1R712MD
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