All MOSFET. CRTD105N06L Datasheet

 

CRTD105N06L MOSFET. Datasheet pdf. Equivalent


   Type Designator: CRTD105N06L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 88 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 64 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 197 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO252

 CRTD105N06L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CRTD105N06L Datasheet (PDF)

 ..1. Size:530K  crhj
 crtd105n06l.pdf

CRTD105N06L CRTD105N06L

CRTD105N06L() Trench N-MOSFET 60V, 8.5m, 64AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 60V Extremely low on-resistance RDS(on) RDS(on) typ. 8.5m Excellent QgxRDS(on) product(FOM) ID64A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval

 9.1. Size:628K  crhj
 crtd110n03l.pdf

CRTD105N06L CRTD105N06L

CRTD110N03L VDSS 30V Features RDS(on) Vgs=10V typ. 9m Lead free and Green Device Available max. 11m Low Rds-on to Minimize Conductive Loss RDS(on) Vgs=4.5V typ. 11m High avalanche Current max. 13m ID @ Vgs=10V (Silicon limited) 45A ID (Package limited) 20A Application Power Tool Boost Converters for LED Lighting SMPS TO252 Absolute Maximum Rat

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BRCS150N12SRA

 

 
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