All MOSFET. CRTD110N03L Datasheet

 

CRTD110N03L Datasheet and Replacement


   Type Designator: CRTD110N03L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 168 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO252
 

 CRTD110N03L substitution

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CRTD110N03L Datasheet (PDF)

 ..1. Size:628K  crhj
 crtd110n03l.pdf pdf_icon

CRTD110N03L

CRTD110N03L VDSS 30V Features RDS(on) Vgs=10V typ. 9m Lead free and Green Device Available max. 11m Low Rds-on to Minimize Conductive Loss RDS(on) Vgs=4.5V typ. 11m High avalanche Current max. 13m ID @ Vgs=10V (Silicon limited) 45A ID (Package limited) 20A Application Power Tool Boost Converters for LED Lighting SMPS TO252 Absolute Maximum Rat

 9.1. Size:530K  crhj
 crtd105n06l.pdf pdf_icon

CRTD110N03L

CRTD105N06L() Trench N-MOSFET 60V, 8.5m, 64AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 60V Extremely low on-resistance RDS(on) RDS(on) typ. 8.5m Excellent QgxRDS(on) product(FOM) ID64A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval

Datasheet: CRSS082N15N , CRTD030N03L , CRTD030N04L , CRTD045N03L , CRTD055N03L , CRTD063N04L , CRTD084NE6N , CRTD105N06L , 2N60 , CRTE120N06L , CRTM025N03L , CRTS030N04L , CRTS095N12N , CRTT029N06N , CRTT056N06N , CRTT084NE6N , CS3N150AHR .

History: 2SK3642-ZK

Keywords - CRTD110N03L MOSFET datasheet

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