CRTE120N06L MOSFET. Datasheet pdf. Equivalent
Type Designator: CRTE120N06L
Marking Code: TE120N06L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 197 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: SOP8
CRTE120N06L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CRTE120N06L Datasheet (PDF)
..1. Size:468K crhj
crte120n06l.pdf
crte120n06l.pdf
CRTE120N06L() Trench N-MOSFET 60V, 8.5m, 16AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 60V Extremely low on-resistance RDS(on) RDS(on) typ. 8.5m Excellent QgxRDS(on) product(FOM) ID16A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
