All MOSFET. CRTE120N06L Datasheet

 

CRTE120N06L Datasheet and Replacement


   Type Designator: CRTE120N06L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 197 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: SOP8
 

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CRTE120N06L Datasheet (PDF)

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CRTE120N06L

CRTE120N06L() Trench N-MOSFET 60V, 8.5m, 16AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 60V Extremely low on-resistance RDS(on) RDS(on) typ. 8.5m Excellent QgxRDS(on) product(FOM) ID16A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval

Datasheet: CRTD030N03L , CRTD030N04L , CRTD045N03L , CRTD055N03L , CRTD063N04L , CRTD084NE6N , CRTD105N06L , CRTD110N03L , CS150N03A8 , CRTM025N03L , CRTS030N04L , CRTS095N12N , CRTT029N06N , CRTT056N06N , CRTT084NE6N , CS3N150AHR , SKD502T .

History: IVN5000ANF | HCD60R260 | ST1005SRG | SUN0765I2 | SIF12N65C | SIF10N60C | IRFR110

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