CRTE120N06L Specs and Replacement
Type Designator: CRTE120N06L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 197 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: SOP8
CRTE120N06L substitution
- MOSFET ⓘ Cross-Reference Search
CRTE120N06L datasheet
crte120n06l.pdf
CRTE120N06L ( ) Trench N-MOSFET 60V, 8.5m , 16A Features Product Summary VDS Uses CRM(CQ) advanced Trench MOS technology 60V Extremely low on-resistance RDS(on) RDS(on) typ. 8.5m Excellent QgxRDS(on) product(FOM) ID 16A Qualified according to JEDEC criteria 100% DVDS Tested 100% DVDS Tested 100% DVDS Tested Applications 100% Aval... See More ⇒
Detailed specifications: CRTD030N03L, CRTD030N04L, CRTD045N03L, CRTD055N03L, CRTD063N04L, CRTD084NE6N, CRTD105N06L, CRTD110N03L, IRF520, CRTM025N03L, CRTS030N04L, CRTS095N12N, CRTT029N06N, CRTT056N06N, CRTT084NE6N, CS3N150AHR, SKD502T
Keywords - CRTE120N06L MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: BUK968R3-40E | BSO110N03MSG
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