CRTS095N12N MOSFET Datasheet: N-Ch, 120V, 112A. Full specification with pinout and replacement list

CRTS095N12N Specs and Replacement

Type Designator: CRTS095N12N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 254 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 112 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 103 nS

Cossⓘ - Output Capacitance: 410 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: TO263

CRTS095N12N substitution

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CRTS095N12N datasheet

..1. Size:496K crhj
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CRTS095N12N ( ) Trench N-MOSFET 120V, 7m , 112A Features Product Summary VDS Uses CRM(CQ) advanced Trench technology 120V Extremely low on-resistance RDS(on) RDS(on) typ. 7m Excellent QgxRDS(on) product(FOM) ID 112A Qualified according to JEDEC criteria 100% DVDS Tested 100% DVDS Tested 100% DVDS Tested Applications 100% Avalanch... See More ⇒

9.1. Size:485K 1
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CRTS084NE6N ( ) Trench N-MOSFET 68V, 6.8m , 83A Features Product Summary VDS Uses CRM(CQ) advanced Trench technology 68V Extremely low on-resistance RDS(on) RDS(on) typ. 6.8m Excellent QgxRDS(on) product(FOM) ID 83A Qualified according to JEDEC criteria 100% DVDS Tested 100% DVDS Tested 100% DVDS Tested Applications 100% Avalanch... See More ⇒

9.2. Size:485K crhj
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9.3. Size:573K crhj
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CRTS030N04L ( ) Trench N-MOSFET 40V, 2.8m , 80A Features Product Summary VDS Uses CRM(CQ) advanced Trench technology 40V Extremely low on-resistance RDS(on) RDS(on) typ. 2.8m Excellent QgxRDS(on) product(FOM) ID 80A Qualified according to JEDEC criteria 100% DVDS Tested 100% DVDS Tested 100% DVDS Tested Applications Motor con... See More ⇒

Detailed specifications: CRTD055N03L, CRTD063N04L, CRTD084NE6N, CRTD105N06L, CRTD110N03L, CRTE120N06L, CRTM025N03L, CRTS030N04L, IRFZ24N, CRTT029N06N, CRTT056N06N, CRTT084NE6N, CS3N150AHR, SKD502T, SKSS055N08N, SKD503T, SKSS042N10N