SKD502T Datasheet and Replacement
Type Designator: SKD502T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 174 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 38.9 nS
Cossⓘ - Output Capacitance: 1057 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO220
SKD502T substitution
SKD502T Datasheet (PDF)
skd502t skss055n08n.pdf

SKD502T, SKSS055N08NSkyMOS1 N-MOSFET 85V, 4.6m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on)4.6m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tes
skd503t skss042n10n.pdf

SKD503T, SKSS042N10N() SkyMOS1 N-MOSFET 100V, 3.6m, 120AFeatures Product Summary Uses CRM(CQ) advanced SkyMOS1 technology Extremely low on-resistance RDS(on) VDS 100V Excellent QgxRDS(on) product(FOM) RDS(on)3.6mID Qualified according to JEDEC criteria 120AApplications Motor control and drive100% Avalanche Tested100%
Datasheet: CRTE120N06L , CRTM025N03L , CRTS030N04L , CRTS095N12N , CRTT029N06N , CRTT056N06N , CRTT084NE6N , CS3N150AHR , P60NF06 , SKSS055N08N , SKD503T , SKSS042N10N , SKST065N08N , SKSS063N08N , SKTT077N07N , AS2308 , AS2309 .
Keywords - SKD502T MOSFET datasheet
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