All MOSFET. SKD502T Datasheet

 

SKD502T MOSFET. Datasheet pdf. Equivalent


   Type Designator: SKD502T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 174 W
   Maximum Drain-Source Voltage |Vds|: 85 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 120 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 55 nC
   Rise Time (tr): 38.9 nS
   Drain-Source Capacitance (Cd): 1057 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm
   Package: TO220

 SKD502T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SKD502T Datasheet (PDF)

 ..1. Size:601K  crhj
skd502t skss055n08n.pdf

SKD502T SKD502T

SKD502T, SKSS055N08NSkyMOS1 N-MOSFET 85V, 4.6m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on)4.6m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tes

 9.1. Size:569K  crhj
skd503t skss042n10n.pdf

SKD502T SKD502T

SKD503T, SKSS042N10N() SkyMOS1 N-MOSFET 100V, 3.6m, 120AFeatures Product Summary Uses CRM(CQ) advanced SkyMOS1 technology Extremely low on-resistance RDS(on) VDS 100V Excellent QgxRDS(on) product(FOM) RDS(on)3.6mID Qualified according to JEDEC criteria 120AApplications Motor control and drive100% Avalanche Tested100%

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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