SKD502T Specs and Replacement
The SKD502T is a power MOSFET designed for switching and amplification applications in power electronics. It offers low on-state resistance, enabling high efficiency and reduced power losses, fast switching performance suitable for SMPS, motor drivers, DC-DC converters. The device is generally robust under proper thermal management and provides good reliability in medium- to high-power designs.
Advantages include high current handling capability, low gate drive power requirements, compatibility with standard MOSFET driver circuits. Its fast response helps minimize switching losses in high-frequency applications.
Disadvantages may include sensitivity to electrostatic discharge, limited tolerance to overvoltage and avalanche conditions if protection is inadequate, the need for effective heat sinking under continuous high load.
For design and repair, ensure proper gate protection, adequate cooling, correct PCB layout to minimize parasitic inductance. Always verify pinout and ratings, replace the device only with electrically equivalent MOSFETs.
Type Designator: SKD502T
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 174 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 38.9 nS
Cossⓘ - Output Capacitance: 1057 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO220
SKD502T substitution
SKD502T datasheet
skd502t skss055n08n.pdf
SKD502T, SKSS055N08N SkyMOS1 N-MOSFET 85V, 4.6m , 120A Features Product Summary VDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on) 4.6m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteria Applications Motor control and drive 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tes... See More ⇒
skd503t skss042n10n.pdf
SKD503T, SKSS042N10N ( ) SkyMOS1 N-MOSFET 100V, 3.6m , 120A Features Product Summary Uses CRM(CQ) advanced SkyMOS1 technology Extremely low on-resistance RDS(on) VDS 100V Excellent QgxRDS(on) product(FOM) RDS(on) 3.6m ID Qualified according to JEDEC criteria 120A Applications Motor control and drive 100% Avalanche Tested 100%... See More ⇒
Detailed specifications: CRTE120N06L , CRTM025N03L , CRTS030N04L , CRTS095N12N , CRTT029N06N , CRTT056N06N , CRTT084NE6N , CS3N150AHR , AO3400A , SKSS055N08N , SKD503T , SKSS042N10N , SKST065N08N , SKSS063N08N , SKTT077N07N , AS2308 , AS2309 .
Keywords - SKD502T MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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