All MOSFET. SKD503T Datasheet

 

SKD503T Datasheet and Replacement


   Type Designator: SKD503T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 952 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO220
 

 SKD503T substitution

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SKD503T Datasheet (PDF)

 ..1. Size:569K  crhj
 skd503t skss042n10n.pdf pdf_icon

SKD503T

SKD503T, SKSS042N10N() SkyMOS1 N-MOSFET 100V, 3.6m, 120AFeatures Product Summary Uses CRM(CQ) advanced SkyMOS1 technology Extremely low on-resistance RDS(on) VDS 100V Excellent QgxRDS(on) product(FOM) RDS(on)3.6mID Qualified according to JEDEC criteria 120AApplications Motor control and drive100% Avalanche Tested100%

 9.1. Size:601K  crhj
 skd502t skss055n08n.pdf pdf_icon

SKD503T

SKD502T, SKSS055N08NSkyMOS1 N-MOSFET 85V, 4.6m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on)4.6m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tes

Datasheet: CRTS030N04L , CRTS095N12N , CRTT029N06N , CRTT056N06N , CRTT084NE6N , CS3N150AHR , SKD502T , SKSS055N08N , IRFZ48N , SKSS042N10N , SKST065N08N , SKSS063N08N , SKTT077N07N , AS2308 , AS2309 , AS2310 , AS2312 .

History: IPP70N12S3-11 | G2002L

Keywords - SKD503T MOSFET datasheet

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