SKST065N08N Datasheet and Replacement
Type Designator: SKST065N08N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 164 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 790 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO220
SKST065N08N substitution
SKST065N08N Datasheet (PDF)
skst065n08n skss063n08n.pdf
SKST065N08N, SKSS063N08N() SkyMOS1 N-MOSFET 85V, 5.6m, 105AFeatures Product Summary Uses CRM(CQ) advanced SkyMOS1 technology Wafer Code WCB Extremely low on-resistance RDS(on) VDS 85V Excellent QgxRDS(on) product(FOM) RDS(on)5.6mID Qualified according to JEDEC criteria 105AApplications Motor control and drive100% Avala
Datasheet: CRTT029N06N , CRTT056N06N , CRTT084NE6N , CS3N150AHR , SKD502T , SKSS055N08N , SKD503T , SKSS042N10N , 7N60 , SKSS063N08N , SKTT077N07N , AS2308 , AS2309 , AS2310 , AS2312 , AS2318 , AS2324 .
History: HCFL70R360 | IPA60R060P7
Keywords - SKST065N08N MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: HCFL70R360 | IPA60R060P7
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