All MOSFET. SKST065N08N Datasheet

 

SKST065N08N Datasheet and Replacement


   Type Designator: SKST065N08N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 164 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 790 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO220
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SKST065N08N Datasheet (PDF)

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SKST065N08N

SKST065N08N, SKSS063N08N() SkyMOS1 N-MOSFET 85V, 5.6m, 105AFeatures Product Summary Uses CRM(CQ) advanced SkyMOS1 technology Wafer Code WCB Extremely low on-resistance RDS(on) VDS 85V Excellent QgxRDS(on) product(FOM) RDS(on)5.6mID Qualified according to JEDEC criteria 105AApplications Motor control and drive100% Avala

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: KF3N40I | MMBF5457 | 2N3797 | RS1G300GN | IPD90N06S4-05 | AONR34332C | 2SK3925-01

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