AS3019E Datasheet and Replacement
Type Designator: AS3019E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 9 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: SOT-523
AS3019E substitution
AS3019E Datasheet (PDF)
as3019e.pdf

AS3019E N-Channel SMD MOSFET ESD ProtectionProduct Summary V(BR)DSS RDS(on)MAX ID 8@4V 30V 0.1A 13@2.5V Feature Application Low on-resistance Interfacing Fast switching speed Switching Low voltage drive makes this device ideal for Portable equipment Easily designed drive circuits Package Circuit diagram DGSSOT-523 Marking K N Document ID Issued D
Datasheet: AS2309 , AS2310 , AS2312 , AS2318 , AS2324 , AS2328 , AS2333 , AS2341 , HY1906P , AS3100 , AS3400 , AS3403 , AS3404 , AS3407 , AS3409 , AS3415E , AS3416E .
History: WMM340N20HG2 | AOC2804 | BSN304 | STU60N3LH5-S | IRL3715ZPBF | SI2321DS | STD3NK60Z
Keywords - AS3019E MOSFET datasheet
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History: WMM340N20HG2 | AOC2804 | BSN304 | STU60N3LH5-S | IRL3715ZPBF | SI2321DS | STD3NK60Z



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