All MOSFET. AS3019E Datasheet

 

AS3019E Datasheet and Replacement


   Type Designator: AS3019E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: SOT-523
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AS3019E Datasheet (PDF)

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AS3019E

AS3019E N-Channel SMD MOSFET ESD ProtectionProduct Summary V(BR)DSS RDS(on)MAX ID 8@4V 30V 0.1A 13@2.5V Feature Application Low on-resistance Interfacing Fast switching speed Switching Low voltage drive makes this device ideal for Portable equipment Easily designed drive circuits Package Circuit diagram DGSSOT-523 Marking K N Document ID Issued D

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BSZ035N03LSG | SVF9N90F

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