AS3019E Specs and Replacement
Type Designator: AS3019E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 9 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: SOT-523
AS3019E substitution
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AS3019E datasheet
as3019e.pdf
AS3019E N-Channel SMD MOSFET ESD Protection Product Summary V(BR)DSS RDS(on)MAX ID 8 @4V 30V 0.1A 13 @2.5V Feature Application Low on-resistance Interfacing Fast switching speed Switching Low voltage drive makes this device ideal for Portable equipment Easily designed drive circuits Package Circuit diagram D G S SOT-523 Marking K N Document ID Issued D... See More ⇒
Detailed specifications: AS2309, AS2310, AS2312, AS2318, AS2324, AS2328, AS2333, AS2341, AOD4184A, AS3100, AS3400, AS3403, AS3404, AS3407, AS3409, AS3415E, AS3416E
Keywords - AS3019E MOSFET specs
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History: AS3407 | TPC8110
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