AS4375 Datasheet and Replacement
Type Designator: AS4375
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SOT-23
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AS4375 Datasheet (PDF)
as4375.pdf

AS4375 P-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 80m@-10V -40V -3A 120m@-4.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23 Marking C 3 Document ID Issued Date Revised Date Revision Page.
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: 2SK3586-01 | SVGP20110NSTR | SVF3N80D | MXP4004AT | APT97N65LC6 | SVF4N60CAMJ | MEE42942-G
Keywords - AS4375 MOSFET datasheet
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History: 2SK3586-01 | SVGP20110NSTR | SVF3N80D | MXP4004AT | APT97N65LC6 | SVF4N60CAMJ | MEE42942-G



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