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AS4375 Specs and Replacement

Type Designator: AS4375

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: SOT-23

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AS4375 datasheet

 ..1. Size:304K  anbon
 as4375.pdf pdf_icon

AS4375

AS4375 P-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 80m @-10V -40V -3A 120m @-4.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23 Marking C 3 Document ID Issued Date Revised Date Revision Page. ... See More ⇒

Detailed specifications: AS3416E, AS3418, AS3422, AS3423, AS3434E, AS3442, AS3523, AS3621, IRF640, AS4435S, AS4606BS, AS60N20S, AS8205M, AT10N60S, AF10N60S, AK10N60S, AG10N60S

Keywords - AS4375 MOSFET specs

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