All MOSFET. AS4435S Datasheet

 

AS4435S Datasheet and Replacement


   Type Designator: AS4435S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP-8
 

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AS4435S Datasheet (PDF)

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AS4435S

AS4435S P-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 20m@-10V -30V -11A 35m@-4.5V Feature Application Advanced trench process technology Load Switch High Density Cell Design For Ultra Low Battery Switch On-Resistance Power management Package Circuit diagram SOP-8 Marking D D D D 4435 XXXXX S S S G Document ID Issued Date Revi

Datasheet: AS3418 , AS3422 , AS3423 , AS3434E , AS3442 , AS3523 , AS3621 , AS4375 , IRF1404 , AS4606BS , AS60N20S , AS8205M , AT10N60S , AF10N60S , AK10N60S , AG10N60S , AT10N65S .

History: MTP3N120E

Keywords - AS4435S MOSFET datasheet

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