All MOSFET. AS4435S Datasheet

 

AS4435S Datasheet and Replacement


   Type Designator: AS4435S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP-8
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AS4435S Datasheet (PDF)

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AS4435S

AS4435S P-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 20m@-10V -30V -11A 35m@-4.5V Feature Application Advanced trench process technology Load Switch High Density Cell Design For Ultra Low Battery Switch On-Resistance Power management Package Circuit diagram SOP-8 Marking D D D D 4435 XXXXX S S S G Document ID Issued Date Revi

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRF7104 | PHP55N03LTA | RZM002P02 | IRF7524D1 | 2SK1629-E1-E | SVS11N70MJD2 | HSBA3031

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