AS8205M Datasheet. Specs and Replacement

Type Designator: AS8205M  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: SOT-23-6L

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AS8205M datasheet

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AS8205M

AS8205M N-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 23m @4.5V 20V 5A 27m @2.5V Feature Application Advanced trench process technology Battery protection High density cell design for ultra low on-resistance Switching application Package Circuit diagram SOT-23-6L Marking G1 D1/D2 G2 8205 S1 D1/D2 S2 Document ID Issued Date Revised ... See More ⇒

Detailed specifications: AS3434E, AS3442, AS3523, AS3621, AS4375, AS4435S, AS4606BS, AS60N20S, IRFP260N, AT10N60S, AF10N60S, AK10N60S, AG10N60S, AT10N65S, AF10N65S, AK10N65S, AG10N65S

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