All MOSFET. AS8205M Datasheet

 

AS8205M Datasheet and Replacement


   Type Designator: AS8205M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 155 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SOT-23-6L
 

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AS8205M Datasheet (PDF)

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AS8205M

AS8205M N-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 23m@4.5V 20V 5A 27m@2.5V Feature Application Advanced trench process technology Battery protection High density cell design for ultra low on-resistance Switching application Package Circuit diagram SOT-23-6L Marking G1 D1/D2 G2 8205 S1 D1/D2 S2 Document ID Issued Date Revised

Datasheet: AS3434E , AS3442 , AS3523 , AS3621 , AS4375 , AS4435S , AS4606BS , AS60N20S , IRF630 , AT10N60S , AF10N60S , AK10N60S , AG10N60S , AT10N65S , AF10N65S , AK10N65S , AG10N65S .

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