AF10N60S PDF and Equivalents Search

 

AF10N60S Specs and Replacement

Type Designator: AF10N60S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69 nS

Cossⓘ - Output Capacitance: 166 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO-220F

AF10N60S substitution

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AF10N60S datasheet

 ..1. Size:1903K  anbon
 at10n60s af10n60s ak10n60s ag10n60s.pdf pdf_icon

AF10N60S

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 8.1. Size:1737K  anbon
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AF10N60S

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 9.1. Size:700K  fairchild semi
 fqaf10n80.pdf pdf_icon

AF10N60S

TM QFET FQAF10N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.7A, 800V, RDS(on) = 1.05 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to Fa... See More ⇒

Detailed specifications: AS3523, AS3621, AS4375, AS4435S, AS4606BS, AS60N20S, AS8205M, AT10N60S, AO3400, AK10N60S, AG10N60S, AT10N65S, AF10N65S, AK10N65S, AG10N65S, AT12N65S, AF12N65S

Keywords - AF10N60S MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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