All MOSFET. AF10N65S Datasheet

 

AF10N65S Datasheet and Replacement


   Type Designator: AF10N65S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 74 nS
   Cossⓘ - Output Capacitance: 166 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO-220F
 

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AF10N65S Datasheet (PDF)

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AF10N65S

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AF10N65S

 9.1. Size:700K  fairchild semi
 fqaf10n80.pdf pdf_icon

AF10N65S

TMQFETFQAF10N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.7A, 800V, RDS(on) = 1.05 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to Fa

Datasheet: AS4606BS , AS60N20S , AS8205M , AT10N60S , AF10N60S , AK10N60S , AG10N60S , AT10N65S , IRFB4110 , AK10N65S , AG10N65S , AT12N65S , AF12N65S , AK12N65S , AG12N65S , AT14N15S , AT7N65S .

History: FQB9P25 | CM60N03C

Keywords - AF10N65S MOSFET datasheet

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