AF10N65S Specs and Replacement
Type Designator: AF10N65S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 74 nS
Cossⓘ - Output Capacitance: 166 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-220F
AF10N65S substitution
- MOSFET ⓘ Cross-Reference Search
AF10N65S datasheet
fqaf10n80.pdf
TM QFET FQAF10N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.7A, 800V, RDS(on) = 1.05 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 55 nC) planar stripe, DMOS technology. Low Crss ( typical 24 pF) This advanced technology has been especially tailored to Fa... See More ⇒
Detailed specifications: AS4606BS, AS60N20S, AS8205M, AT10N60S, AF10N60S, AK10N60S, AG10N60S, AT10N65S, AON6414A, AK10N65S, AG10N65S, AT12N65S, AF12N65S, AK12N65S, AG12N65S, AT14N15S, AT7N65S
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