AF10N65S MOSFET. Datasheet pdf. Equivalent
Type Designator: AF10N65S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 74 nS
Cossⓘ - Output Capacitance: 166 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-220F
AF10N65S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AF10N65S Datasheet (PDF)
9.1. Size:700K fairchild semi
fqaf10n80.pdf
fqaf10n80.pdf
TMQFETFQAF10N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.7A, 800V, RDS(on) = 1.05 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 55 nC)planar stripe, DMOS technology. Low Crss ( typical 24 pF)This advanced technology has been especially tailored to Fa
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