AF12N65S Datasheet and Replacement
Type Designator: AF12N65S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-220F
AF12N65S substitution
AF12N65S Datasheet (PDF)
fqaf12n60.pdf

April 2000TMQFETQFETQFETQFETFQAF12N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.8A, 600V, RDS(on) = 0.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been
Datasheet: AF10N60S , AK10N60S , AG10N60S , AT10N65S , AF10N65S , AK10N65S , AG10N65S , AT12N65S , 2SK3878 , AK12N65S , AG12N65S , AT14N15S , AT7N65S , AU10N65S , AU2N60S , AD2N60S , AT2N60S .
History: STF16N60M6
Keywords - AF12N65S MOSFET datasheet
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History: STF16N60M6



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