AF12N65S Specs and Replacement
Type Designator: AF12N65S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 51 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO-220F
AF12N65S substitution
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AF12N65S datasheet
fqaf12n60.pdf
April 2000 TM QFET QFET QFET QFET FQAF12N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.8A, 600V, RDS(on) = 0.7 @ VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 42 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been... See More ⇒
Detailed specifications: AF10N60S, AK10N60S, AG10N60S, AT10N65S, AF10N65S, AK10N65S, AG10N65S, AT12N65S, 8205A, AK12N65S, AG12N65S, AT14N15S, AT7N65S, AU10N65S, AU2N60S, AD2N60S, AT2N60S
Keywords - AF12N65S MOSFET specs
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