All MOSFET. AF12N65S Datasheet

 

AF12N65S Datasheet and Replacement


   Type Designator: AF12N65S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220F
 

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AF12N65S Datasheet (PDF)

 ..1. Size:1850K  anbon
 at12n65s af12n65s ak12n65s ag12n65s.pdf pdf_icon

AF12N65S

 8.1. Size:537K  fairchild semi
 fqaf12n60.pdf pdf_icon

AF12N65S

April 2000TMQFETQFETQFETQFETFQAF12N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.8A, 600V, RDS(on) = 0.7 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been

Datasheet: AF10N60S , AK10N60S , AG10N60S , AT10N65S , AF10N65S , AK10N65S , AG10N65S , AT12N65S , 8205A , AK12N65S , AG12N65S , AT14N15S , AT7N65S , AU10N65S , AU2N60S , AD2N60S , AT2N60S .

History: AOB12N65L | STI12N65M5 | 2SK1650 | HU60P03 | IRLR024NPBF | DMT10H009LCG | DMP6185SEQ

Keywords - AF12N65S MOSFET datasheet

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