All MOSFET. AT14N15S Datasheet

 

AT14N15S MOSFET. Datasheet pdf. Equivalent


   Type Designator: AT14N15S
   Marking Code: T14N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 320 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 140 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 690 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
   Package: TO-220AB

 AT14N15S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AT14N15S Datasheet (PDF)

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 at14n15s.pdf

AT14N15S AT14N15S

AT14N15S N-Channel Enhancement Mode Power MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 150V 6.2m@10V 140A Feature Application High density cell design for ultra low Rdson DC/DC Converter Fully characterized avalanche voltage and current Ideal for high-frequency switching and Good stability and uniformity with high EAS synchronous rectification Excellent package for good

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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