AT14N15S MOSFET. Datasheet pdf. Equivalent
Type Designator: AT14N15S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 320 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 140 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 690 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: TO-220AB
AT14N15S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AT14N15S Datasheet (PDF)
at14n15s.pdf

AT14N15S N-Channel Enhancement Mode Power MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 150V 6.2m@10V 140A Feature Application High density cell design for ultra low Rdson DC/DC Converter Fully characterized avalanche voltage and current Ideal for high-frequency switching and Good stability and uniformity with high EAS synchronous rectification Excellent package for good
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