AT7N65S Datasheet and Replacement
Type Designator: AT7N65S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 142 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-220AB
AT7N65S substitution
AT7N65S Datasheet (PDF)
at7n65s.pdf
AT7N65S N-Channel Enhancement Mode Power MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 650V 1.5@10V 7A Feature Application Low Crss High efficiency switch mode power supplies Low gate charge Electronic lamp ballasts Fast switching UPS Package Circuit diagram TO-220AB Marking T7N65 XXXXX S G D Document ID Issued Date Revised Date Revision Page. Page 1 AS
Datasheet: AF10N65S , AK10N65S , AG10N65S , AT12N65S , AF12N65S , AK12N65S , AG12N65S , AT14N15S , K3569 , AU10N65S , AU2N60S , AD2N60S , AT2N60S , AF2N60S , AK2N60S , AG2N60S , AU4N60S .
History: IXFH9N80Q | SQJ946EP | 6435 | ES9926 | SM2011PSKP | 2SK951-MR | AOWF8N50
Keywords - AT7N65S MOSFET datasheet
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History: IXFH9N80Q | SQJ946EP | 6435 | ES9926 | SM2011PSKP | 2SK951-MR | AOWF8N50
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