AT7N65S Specs and Replacement
Type Designator: AT7N65S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 142 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 150 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO-220AB
AT7N65S substitution
- MOSFET ⓘ Cross-Reference Search
AT7N65S datasheet
at7n65s.pdf
AT7N65S N-Channel Enhancement Mode Power MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 650V 1.5 @10V 7A Feature Application Low Crss High efficiency switch mode power supplies Low gate charge Electronic lamp ballasts Fast switching UPS Package Circuit diagram TO-220AB Marking T7N65 XXXXX S G D Document ID Issued Date Revised Date Revision Page. Page 1 AS... See More ⇒
Detailed specifications: AF10N65S, AK10N65S, AG10N65S, AT12N65S, AF12N65S, AK12N65S, AG12N65S, AT14N15S, IRF9540, AU10N65S, AU2N60S, AD2N60S, AT2N60S, AF2N60S, AK2N60S, AG2N60S, AU4N60S
Keywords - AT7N65S MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: AGM311MN | STF7N52K3
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