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AT7N65S Specs and Replacement

Type Designator: AT7N65S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-220AB

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AT7N65S datasheet

 ..1. Size:880K  anbon
at7n65s.pdf pdf_icon

AT7N65S

AT7N65S N-Channel Enhancement Mode Power MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 650V 1.5 @10V 7A Feature Application Low Crss High efficiency switch mode power supplies Low gate charge Electronic lamp ballasts Fast switching UPS Package Circuit diagram TO-220AB Marking T7N65 XXXXX S G D Document ID Issued Date Revised Date Revision Page. Page 1 AS... See More ⇒

Detailed specifications: AF10N65S, AK10N65S, AG10N65S, AT12N65S, AF12N65S, AK12N65S, AG12N65S, AT14N15S, IRF9540, AU10N65S, AU2N60S, AD2N60S, AT2N60S, AF2N60S, AK2N60S, AG2N60S, AU4N60S

Keywords - AT7N65S MOSFET specs

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