All MOSFET. AU10N65S Datasheet

 

AU10N65S Datasheet and Replacement


   Type Designator: AU10N65S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 82 nS
   Cossⓘ - Output Capacitance: 107 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO-251AB
 

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AU10N65S Datasheet (PDF)

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AU10N65S

AU10N65S N-Channel Enhancement Mode Power MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 650V 1.3@10V 10A Feature Application Low Crss High efficiency switch mode power supplies Low gate charge Electronic lamp ballasts Fast switching UPS Package Circuit diagram TO-251AB Marking D U10N65S G D S Document ID Issued Date Revised Date Revision Page. Page 1 AS-3

Datasheet: AK10N65S , AG10N65S , AT12N65S , AF12N65S , AK12N65S , AG12N65S , AT14N15S , AT7N65S , 2N7000 , AU2N60S , AD2N60S , AT2N60S , AF2N60S , AK2N60S , AG2N60S , AU4N60S , AD4N60S .

History: APT3580BN | RSR030N06

Keywords - AU10N65S MOSFET datasheet

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