AU10N65S MOSFET Datasheet: N-Ch, 650V, 10A. Full specification with pinout and replacement list

AU10N65S Specs and Replacement

Type Designator: AU10N65S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 82 nS

Cossⓘ - Output Capacitance: 107 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO-251AB

AU10N65S substitution

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AU10N65S datasheet

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AU10N65S N-Channel Enhancement Mode Power MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 650V 1.3 @10V 10A Feature Application Low Crss High efficiency switch mode power supplies Low gate charge Electronic lamp ballasts Fast switching UPS Package Circuit diagram TO-251AB Marking D U10N65S G D S Document ID Issued Date Revised Date Revision Page. Page 1 AS-3... See More ⇒

Detailed specifications: AK10N65S, AG10N65S, AT12N65S, AF12N65S, AK12N65S, AG12N65S, AT14N15S, AT7N65S, AON7408, AU2N60S, AD2N60S, AT2N60S, AF2N60S, AK2N60S, AG2N60S, AU4N60S, AD4N60S