11N65TFS Specs and Replacement
Type Designator: 11N65TFS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 87 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO220F
11N65TFS substitution
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11N65TFS datasheet
11n65tfs.pdf
11N65TFS 11N65TFS 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE TO-220TF 11A,650V,R =0.36 @V =10V/5.5A DS(ON)MAX GS Low gate charge Low C iss Fast switching 100% avalanche tested Absolute Maximum Ratings(T =25 ,unless otherwise noted) C Parameter Symbol UNIT 11N65TFS Drain-Source Voltage V 650 DSS V Gate-Source Voltage V 30 GSS Con... See More ⇒
gc11n65t gc11n65f gc11n65k.pdf
GC11N65 GOFORD Description VDS RDS (ON ) ID The GC11N 65 uses advanced super junction technology and @ (Max) 10V design to provide excellent R , low gate charge and DS(ON) operation with low gate voltages. This device is suitable for 650V 360m 11 A industry s AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. General F... See More ⇒
svsp11n65dd2tra svsp11n65fd2 svsp11n65sd2 svsp11n65sd2tr svsp11n65fjdd2 svsp11n65kd2 svsp11n65td2.pdf
SVSP11N65D/F/S/FJD/K/TD2 11A, 650V MOS 2 1 SVSP11N65D/F/S/FJD/K/TD2 N MOSFET 3 1 TO-263-2L MOS 3 1. 2. 3. S... See More ⇒
Detailed specifications: AD8N60S , AT8N60S , AF8N60S , AK8N60S , AG8N60S , 100N10NF , 10N50TF , 11N65GS , P60NF06 , 12N60B , 12N60H , 12N65 , 12N65F , 12N65B , 12N65H , 12N65TF , 13N50MF .
Keywords - 11N65TFS MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: 11N65GS | 150N06Y
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