11N65TFS11N65TFS11 Amps,650 Volts N-Channel Super Junction Power MOSFETFEATURETO-220TF 11A,650V,R =0.36@V =10V/5.5ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche testedAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT11N65TFSDrain-Source Voltage V 650DSSVGate-Source Voltage V 30GSSCon

GC11N65 GOFORD Description VDS RDS (ON ) ID The GC11N 65 uses advanced super junction technology and @ (Max) 10V design to provide excellent R , low gate charge and DS(ON)operation with low gate voltages. This device is suitable for 650V 360m 11 A industrys AC-DC SMPS requirement for PFC, AC/DC power conversion, and industrial power application. General F

SVSP11N65D/F/S/FJD/K/TD2 11A, 650V MOS 2 1SVSP11N65D/F/S/FJD/K/TD2 N MOSFET31TO-263-2L MOS 3 1. 2. 3.S

SVS11N65T/F/K/S 11A, 650V DP MOS 2 SVS11N65T/F/K/S N MOSFET 123 DP MOS 1TO-262-3L 3SVS11N65T/F/K/S /