4N65TF MOSFET. Datasheet pdf. Equivalent
Type Designator: 4N65TF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14.5 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 55 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: TO220F
4N65TF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
4N65TF Datasheet (PDF)
4n65tf.pdf
SPECIFICATION FOR APPROVAL 18X001040024 MOSFET 4N65TF ROHS2.0 REACH V1.0 20180721 20180721 20180721
m4n65tf.pdf
M4N65TF4 Amps,650 Volts N-CHANNEL MOSFETFEATURETO-220TF 4A,650V,R =2.3@V =10V/2ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capabilityAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNITM4N65TFDrain-Source Voltage V 650DSSVGate-Source Voltage V 30GSSContinuous
svs14n65fjd2 svs14n65fd2 svs14n65td2 svs14n65sd2 svs14n65sd2tr.pdf
SVS14N65FJ(F)(T)(S)D2 14A, 650V MOS 21SVS14N65FJ/F/T/SD2 N MOSFET 31TO-263-2L MOS 31. 2. 3.SVS14N65FJ/
svsp14n65fjdd2 svsp14n65td2 svsp14n65kd2.pdf
SVSP14N65FJD (T)KD2 14A, 650V MOS 2SVSP14N65FJD/T/KD2 N MOSFET 1 MOS 123 3TO-262-3LSVSP14N65FJD/T/KD2
svf4n65t svf4n65f svf4n65mj svf4n65m svf4n65m svf4n65d svf4n65dtr svf4n65k.pdf
SVF4N65T/F/M/MJ/D/K 4A650V N SVF4N65T/F/M/MJ/D/K N MOS F-CellTM VDMOS
svd4n65t svd4n65f.pdf
SVD4N65T/SVD4N65F4A 650V N 2SVD4N65T/F N MOS S-RinTM VDMOS 1 3 1. 2. 3. AC-DC DC-DC H PMW 11 22 33TO-220F-3L TO-220-3L 4A 650V RDS(on) =2.3@VGS=10V dv/dt
svf4n65t svf4n65f svf4n65m svf4n65mj svf4n65d svf4n65k.pdf
SVF4N65T/F/M/MJ/D/K 4A650V N 2SVF4N65T/F/M/MJ/D/K N MOS 123 F-CellTM VDMOS TO-251J-3L13
hy4n65t.pdf
HY4N65T / HY4N65FT 650V / 4A650V, RDS(ON)=2.8W@VGS=10V, ID=2AN-Channel Enhancement Mode MOSFETFeaturesTO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1 1
atm4n65te.pdf
ATM4N65TE N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage: 650V Continuous Drain Current: 4A DESCRIPTION The ATM4N65TE is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching
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