4N65TF - описание и поиск аналогов

M4N65TF 4 Amps,650 Volts N-CHANNEL MOSFET FEATURE TO-220TF 4A,650V,R =2.3 @V =10V/2A DS(ON)MAX GS Low gate charge Low C iss Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings(T =25 ,unless otherwise noted) C Parameter Symbol UNIT M4N65TF Drain-Source Voltage V 650 DSS V Gate-Source Voltage V 30 GSS Continuous

SVS14N65FJ(F)(T)(S)D2 14A, 650V MOS 2 1 SVS14N65FJ/F/T/SD2 N MOSFET 3 1 TO-263-2L MOS 3 1. 2. 3. SVS14N65FJ/

SVD4N65T/SVD4N65F 4A 650V N 2 SVD4N65T/F N MOS S-RinTM VDMOS 1 3 1. 2. 3. AC-DC DC-DC H PMW 1 1 2 2 3 3 TO-220F-3L TO-220-3L 4A 650V RDS(on) =2.3 @VGS=10V dv/dt

SVF4N65T/F/M/MJ/D/K 4A 650V N 2 SVF4N65T/F/M/MJ/D/K N MOS 1 2 3 F-CellTM VDMOS TO-251J-3L 1 3

HY4N65T / HY4N65FT 650V / 4A 650V, RDS(ON)=2.8W@VGS=10V, ID=2A N-Channel Enhancement Mode MOSFET Features TO-220AB ITO-220AB Low On-State Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS In compliance with EU RoHs 2002/95/EC Directives 1 1

ATM4N65TE N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage 650V Continuous Drain Current 4A DESCRIPTION The ATM4N65TE is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFET is usually used in high speed switching

APJ14N65FIPIT (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 730V