All MOSFET. 8N06D Datasheet

 

8N06D Datasheet and Replacement


   Type Designator: 8N06D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 13.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
   Package: TO251
 

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8N06D Datasheet (PDF)

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 8n06g 8n06d.pdf pdf_icon

8N06D

8N06(G,D)7.5 Amps,60 Volts N-CHANNEL MOSFETFEATURE 7.5A,60V,R =82m@V =10V/4ADS(ON)MAX GSR =107m@V =4.5V/4ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capabilityTO-252 TO-2518N06G 8N06DAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol 8N06(G,D) UNITDrain-Source Voltage

 0.1. Size:910K  cn minos
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8N06D

60V N-Channel Power MOSFETDescriptionThe MDT08N06 uses advanced trench technologyto provide excellent RDS(ON), low gate charge. It canbe used in a wide variety of applications.General Features V =60V, R

Datasheet: 50N06H , 50N06D , 5N65GS , 5N70GS , 7N60GS , 7N60DS , 7N60TF , 8N06G , IRFP460 , M4N65TF , FS8205 , FMD5N50E5 , FKBA3004 , FKBA3006 , FKBB3002 , FKBB3004 , FKD3006 .

History: MDP4N60TH | BRCS5P06MC | MDF6N65BTH | 110N04 | 2SK3444 | SHD280502

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