All MOSFET. 8N06D Datasheet

 

8N06D MOSFET. Datasheet pdf. Equivalent


   Type Designator: 8N06D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 13.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
   Package: TO251

 8N06D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

8N06D Datasheet (PDF)

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 8n06g 8n06d.pdf

8N06D 8N06D

8N06(G,D)7.5 Amps,60 Volts N-CHANNEL MOSFETFEATURE 7.5A,60V,R =82m@V =10V/4ADS(ON)MAX GSR =107m@V =4.5V/4ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capabilityTO-252 TO-2518N06G 8N06DAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol 8N06(G,D) UNITDrain-Source Voltage

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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