FS8205 MOSFET Datasheet: N-Ch, 20V, 6A. Full specification with pinout and replacement list

FS8205 Specs and Replacement

Type Designator: FS8205

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SOT23-6

FS8205 substitution

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FS8205 datasheet

..1. Size:401K fortune semi
fs8205.pdf pdf_icon

REV. 1.7 FS8205-DS-17_EN NOV 2011 Datasheet FS8205 Dual N-Channel Enhancement Mode Power MOSFET Only FORTUNE' Properties Reference For FS8205 Fortune Semiconductor Corporation 28F.,No.27, Sec. 2, Zhongzheng E. Rd., Danshui Dist, New Taipei City 251, Taiwan Tel. 886-2-28094742 Fax 886-2-28094874 www.ic-fortune.com This manual conta... See More ⇒

0.1. Size:391K can-sheng
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0.2. Size:302K fortune semi
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REV. 1.2 FS8205A-DS-12_EN AUG 2009 Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET Only FSC Properties Reference For FS8205A Fortune Semiconductor Corporation 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel. 886-2-28094742 Fax 886-2-28094874 www.ic-fortune.com This manual contai... See More ⇒

0.3. Size:4365K fuxinsemi
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FS8205A N-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 25m @4.5V 20V 6A 32m @2.5V Feature Application Advanced trench process technology Battery protection High density cell design for ultra low on-resistance Switching application Package Circuit diagram SOT-23-6L Marking G1 D1/D2 G2 8205A S1 D1/D2 S2 www.fuxinsemi.com Page 1 Ver2.1 FS... See More ⇒