FS8205 Datasheet and Replacement
Type Designator: FS8205
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOT23-6
- MOSFET Cross-Reference Search
FS8205 Datasheet (PDF)
fs8205.pdf
REV. 1.7 FS8205-DS-17_EN NOV 2011 Datasheet FS8205 Dual N-Channel Enhancement Mode Power MOSFET OnlyFORTUNE'PropertiesReferenceForFS8205 Fortune Semiconductor Corporation 28F.,No.27, Sec. 2, Zhongzheng E. Rd., Danshui Dist, New Taipei City 251, Taiwan Tel.886-2-28094742 Fax886-2-28094874 www.ic-fortune.com This manual conta
fs8205a.pdf
REV. 1.2 FS8205A-DS-12_EN AUG 2009Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET OnlyFSCPropertiesReferenceForFS8205A Fortune Semiconductor Corporation 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.886-2-28094742 Fax886-2-28094874 www.ic-fortune.com This manual contai
fs8205a.pdf
FS8205AN-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 25m@4.5V 20V 6A 32m@2.5V Feature Application Advanced trench process technology Battery protection High density cell design for ultra low on-resistance Switching application Package Circuit diagramSOT-23-6L Marking G1 D1/D2 G2 8205AS1 D1/D2 S2 www.fuxinsemi.com Page 1 Ver2.1FS
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: VN66AD | SSP6N90A | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003
Keywords - FS8205 MOSFET datasheet
FS8205 cross reference
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History: VN66AD | SSP6N90A | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003
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