FMD5N50E5 Specs and Replacement
Type Designator: FMD5N50E5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 79 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO252
FMD5N50E5 substitution
- MOSFET ⓘ Cross-Reference Search
FMD5N50E5 datasheet
fmd5n50e5.pdf
FMD5N50E5 Silicon N-Channel Power MOSFET General Description FMD5N50E5, the silicon N-channel Enhanced VDMOSFETs, VDSS 500 V is obtained by the self-aligned planar Technology which reduce ID 5 A the conduction loss, improve switching performance and Trr 85 ns enhance the avalanche energy. The transistor can be used in RDS(ON)Typ 1.25 various power switching circuit ... See More ⇒
Detailed specifications: 5N70GS , 7N60GS , 7N60DS , 7N60TF , 8N06G , 8N06D , M4N65TF , FS8205 , IRF1404 , FKBA3004 , FKBA3006 , FKBB3002 , FKBB3004 , FKD3006 , DM4N65E , DM4N65E-F , DM5N65E .
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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